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| CM50TJ-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 50 Amperes/1200 Volts A D E F 19 18 NOT CONNECTED U G NOT CONNECTED H 17 16 15 20 14 B J Tc S 21 N M 13 K Tc L L T 1 2 34 56 78 9 10 11 12 P Q Y X R V C W 21 1 2 5 6 9 10 13 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50TJ-24F is a 1200V (VCES), 50 Ampere SixIGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 50 VCES Volts (x 50) 24 3 4 20 19 7 8 11 12 14 17 15 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.78 2.42 0.67 4.330.01 3.00 0.75 0.60 0.15 2.26 1.970.01 1.07 Millimeters 121.5 61.5 17.0 110.00.25 76.2 19.05 15.24 3.81 57.5 50.00.25 27.0 Dimensions M N P Q R S T U V W X Y Inches 0.15 0.75 0.15 3.00 0.60 0.45 0.04 0.22 Dia. 0.12 0.81 3.72 4.62 Millimeters 3.81 19.05 3.81 76.2 15.24 1.15 1.0 5.5 Dia. 3.0 20.5 94.5 118.11 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TJ-24F Trench Gate Design Six IGBTMODTM 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current (Tc = 25C)** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150C) (Tc = 25C) Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - Viso CM50TJ-24F -40 to 150 -40 to 125 1200 20 50 100* 50 100* 219 31 300 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 5mA, VCE = 10V IC = 50A, VGE = 15V, Tj = 25C IC = 50A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. - - 5 - - - - Typ. - - 6 1.8 1.9 550 - Max. 1 20 7 2.4 - - 3.3 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TJ-24F Trench Gate Design Six IGBTMODTM 50 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3 , Inductive Load Switching Operation VCE = 10V, VGE = 0V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 2.1 Max. 20 0.85 0.80 100 50 300 300 150 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(j-c)'D Test Conditions Per IGBT 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/6 Module, Tc Reference Point per Outline drawing Thermal Resistance, Junction to Case Per IGBT 1/6 Module, Tc Reference Point Under Chip Thermal Resistance, Junction to Case Per FWDi 1/6 Module, Tc Reference Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - 0.13 - C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. - Typ. - Max. 0.57 Units C/W C/W C/W - - 0.96 - 0.34 - - 0.45 - C/W 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TJ-24F Trench Gate Design Six IGBTMODTM 50 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 100 COLLECTOR CURRENT, IC, (AMPERES) 80 VGE = 20V 9.5 9 2.5 2.0 1.5 1.0 0.5 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 15 11 10 3.0 VGE = 15V Tj = 25C Tj = 125C 5 Tj = 25C 4 3 IC = 100A 60 40 8.5 2 1 IC = 50A IC = 20A 20 0 0 1 2 8 0 0 20 40 60 80 100 0 4 8 12 16 20 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 VGE = 0V 103 VCC = 600V VGE = 15V RG = 6.3 Tj = 125C Inductive Load tf td(off) 101 SWITCHING TIME, (ns) Cies 102 td(on) tr 101 100 Coes Cres 101 100 0 1.0 2.0 3.0 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 102 REVERSE RECOVERY TIME, trr, (ns) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 10-3 10-2 10-1 100 101 IC = 50A trr Irr 16 12 8 4 VCC = 600V 100 Rth(j-c) = 0.57C/W (IGBT) Under Chip = 0.34C/W Rth(j-c) = 0.96C/W (FWDi) 101 VCC = 600V VGE = 15V RG = 6.3 Tj = 25C Inductive Load 101 VCC = 400V 10-1 10-1 10-2 100 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 Per Unit Base Single Pulse TC = 25C 10-2 0 0 10-3 10-5 TIME, (s) 200 400 600 800 10-4 10-3 10-3 GATE CHARGE, QG, (nC) 4 |
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