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| SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. 11.00 (.433) 7.00 (.276) 2 1 MIT-5A11J Package Dimensions Unit : mm (inches) 13.00 (.512) 4 3 2.00 (.079) 6.00 (.236) OPTICAL LINE Features l l l l l 0.50 (.020) 0.50 (.020) Non -contact switching For- direct pc board Dual - in - line socket mounting Fast switching speed Choice of mounting configuration. 6.00 (.236) 2.54 (.100) 1.58 (.062) 9.50 (.370) 1.50 (.059) 4.00 (.157) 5.00 (.197) 2.85 (.112) 7.27 (.286) 1.50 (.059) 1.38 (.054) NOTE 1. Tolerance is 0.25 mm (.010") unless otherwise noted. Absolute Maximum Ratings @TA =25 C Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100 o o o Unit mA V mW V V mW mW -25 C to + 85 C -40oC to + 100oC Unity Opto Technology Co., Ltd. 04/01/2002 MIT-5A11J Optical-Electrical Characteristics @TA =25oC Parameter Input Output Forward Voltage Reverse Current Collector Dark Current Collector Current Transfer Cha- Response Time (RISE) racteristics Response Time (FALL) symbol VF IR Iceo Ic (on) tr tf 1 20 20 Min. Typ. 1.2 Max. 1.4 10 100 0.4 10 100 100 Unit. V A nA V mA S S Test Conditions IF =20mA VR =5V Vce =10V Ic=0.1mA,Ee=0.1mW/cm2 IF =20mA, Vce =5V Ic=100A, Vce =5V RL =1k, d =1mm Collector Emitter Saturation Voltage VCE(SAT) Typical Optical-Electrical Characteristic Curves Forward Current IF (mA) 60 50 40 30 20 10 0 -25 0 25 50 75 100 Power Dissipation (mW) 120 100 80 60 40 20 0 -25 0 25 50 75 100 PTOT PD , PC Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) 100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8 Ambient Temperature TA (oC ) Fig.2 Power Dissipation vs Ambient Temperature Collector Current Ic (mA) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 Vce=2V Ta=25o C 5 10 15 20 25 30 Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Relative Collector Current (%) Collector Current Ic (A) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 12 Ta=25J 120 100 80 60 40 20 0 -25 Forward Current IF (mA) Fig.4 Collector Current vs Forward Current 20mA IF=15mA 10mA 4mA 0 25 50 75 o 100 Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Ambient Temperature TA ( C ) Fig.6 Relative Collector Current VS. TA Unity Opto Technology Co., Ltd. 04/01/2002 MIT-5A11J Typical Optical-Electrical Characteristic Curves Collector Dark Current ICEO 10000 VCE=20V 1000 100 10 1 0 25 50 75 100 1000 Response Time (s) 100 10 1 V CE =2V I C =100mA Ta=25 o C 0.1 0.01 Ambient Temperature TA ( oC ) Fig.7 Collector Dark Current vs. Ambient Temperature 100 Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance 0.1 1 10 100 Relative Sensitivity (%) Ta=25o C Response Time Measurement Circuit 80 60 40 20 0 700 Input 800 900 1000 1100 1200 VR Output Input Output tr 90 % 10 % t t tf IL VCC Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) Sensing Position Characteristics (Typical) X Y I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 o C Relative light current IL (%) 100 Ta=25 C o (Center of optical axis) 50 X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + + Distance d (mm) Unity Opto Technology Co., Ltd. 04/01/2002 |
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