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PD -94159A
IRF7756
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
VDSS
-12V
RDS(on) max
0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V
ID
4.3A 3.4A 2.2A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2
with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -4.3 -3.5 -17 1.0 0.64 8.0 8.0 -55 to +150
Units
V A W W mW/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
125
Units
C/W
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3/17/04
IRF7756
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
RDS(on)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -12 --- --- -0.4 13 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.006 --- V/C Reference to 25C, ID = -1mA --- 0.040 VGS = -4.5V, ID = -4.3A --- 0.058 VGS = -2.5V, ID = -3.4A --- 0.087 VGS = -1.8V, ID = -2.2A --- -0.9 V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -4.3A --- -1.0 VDS = -9.6V, VGS = 0V A --- -25 VDS = -9.6V, VGS = 0V, TJ = 70C --- -100 VGS = -8.0V nA --- 100 VGS = 8.0V 12 18 ID = -4.3A 1.8 2.7 nC VDS = -6.0V 2.9 4.4 VGS = -4.5V 12 --- VDD = -6.0V, ns 18 --- ID = -1.0A 160 --- RG = 6.0 170 --- VGS = -4.5V 1400 --- VGS = 0V 310 --- pF VDS = -10V 240 --- = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 35 20 -1.0 A -17 -1.2 53 30 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, IF = -1.0A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t 10sec.
Pulse width 400s; duty cycle 2%.
2
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IRF7756
100
VGS -7.5V -4.5V -2.5V -1.8V -1.5V -1.2V -1.0V BOTTOM -0.8V TOP
100
10
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -7.5V -4.5V -2.5V -1.8V -1.5V -1.2V -1.0V BOTTOM -0.8V TOP
10
1
1
0.1
-0.8V
-0.8V
20s PULSE WIDTH TJ = 150 C
1 10
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10
0.1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -4.3A
-I D, Drain-to-Source Current ( )
1.5
10
T J = 150C
1.0
1
T J = 25C VDS = -10V 20s PULSE WIDTH
0 0.5 1.0 1.5 2.0
0.5
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7756
2400 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
10
ID = -4.3A VDS =-9.6V VDS =-6V
2000
-VGS , Gate-to-Source Voltage (V)
8
C, Capacitance(pF)
1600
Ciss
6
1200
4
800
400
Coss Crss
2
0 1 10 100
0 0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
-ISD , Reverse Drain Current (A)
10
-I D, Drain-to-Source Current (A)
10
TJ = 150 C
100sec 1msec
1
1 T A = 25C Tj = 150C Single Pulse 0.1 0.1 1 10
10msec
TJ = 25 C V GS = 0 V
0.4 0.6 0.8 1.0
0.1 0.2
-VSD ,Source-to-Drain Voltage (V)
100
-V DS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7756
5.0
VDS
4.0
RD
VGS RG
-ID , Drain Current (A)
D.U.T.
+
3.0
VGS
2.0
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150
VGS 10%
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 PDM t1 t2
0.1 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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VDD
5
IRF7756
RDS(on) , Drain-to -Source On Resistance ( )
0.07
RDS (on) , Drain-to-Source On Resistance ( )
0.040 VGS = -1.8V 0.035
0.06
0.05
0.030 VGS = -2.5V 0.025 VGS = -4.5V 0.020 0 4 8 12 16 -I D , Drain Current (A)
0.04
ID = -4.3A
0.03
0.02 1.0 2.0 3.0 4.0 5.0
-V GS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate Voltage
Fig 12. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRF7756
0.7
80
-VGS(th) Gate threshold Voltage (V)
0.6
60
Power (W)
0.5
ID = -250A
40
0.4
20
0.3
0.2 -75 -50 -25 0 25 50 75 100 125 150
0 0.001 0.010 0.100 1.000 10.000 100.000
T J , Temperature ( C )
Time (sec)
Fig 14. Threshold Voltage Vs. Temperature
Fig 15. Typical Power Vs. Time
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IRF7756
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
LOT CODE (XX) PART NUMBER
DAT E CODE (YW)
XXYW 7702
T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF
24 25 26
X Y Z
T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51 52
X Y Z
TSSOP-8 Tape and Reel
8LT S S OP (MO-153AA)
16 mm
O 13"
16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
8
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IRF7756
TSSOP-8 Package Outline
Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/04
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