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| SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 4 - SEPTEMBER 1997 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE FZT857 FZT957 FZT857 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE 350 300 6 5 3.5 3 -55 to +150 UNIT V V V A A W C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches square. FZT857 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 350 350 300 6 TYP. 475 475 350 8 50 1 50 1 10 100 155 230 345 1250 1.12 100 100 15 200 200 25 15 80 11 100 5300 MAX. UNIT V V V V nA A nA A nA mV mV mV mV mV V CONDITIONS. I C=100A I C =1A, RB1k I C=10mA* I E=100A V CB=300V V CB=300V, T amb=100C V CB=300V V CB=300V, T amb=100C V EB=6V I C=500mA, I B=50mA* I C=1A, I B=100mA* I C=2A, I B=200mA* I C=3.5A, I B=600mA* I C=3.5A, I B=600mA* I C =3.5A, V CE=10V* I C=10mA, V CE=5V I C=500mA, V CE=10V* I C=2A, V CE=10V* I C=3A, V CE=10V* MHz pF ns ns I C==100mA, V CE=10V f=50MHz V CB=20V, f=1MHz I C=250mA, I B1=25mA I B2=25mA, V CC=50V Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage I EBO V CE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times V BE(sat) V BE(on) h FE 300 fT C obo t on t off *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device I CER R 1 k FZT857 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 VCE=10V VCE=2V 200 0.4 IC/IB=10 IC/IB=50 0.2 100 0 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.0 2.0 VCE=5V VBE(sat) - (Volts) VBE - (Volts) 1.5 IC/IB=10 IC/IB=50 1.5 1.0 1.0 0.5 0.0001 0.001 0.01 0.1 1 10 0.5 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test Tamb=25 C IC - Collector Current (A) 1 0.1 DC 1s 100ms 10ms 1ms 100s 0.01 1 10 100 1000 VCE - Collector Voltage (V) Safe Operating Area hFE - Typical Gain 1.4 300 VCE(sat) - (Volts) |
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