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| Preliminary Data SIPMOS (R) Small-Signal-Transistor Features * Dual N Channel * BSO 615NV Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.12 3.1 V A Enhancement mode * Avalanche rated * dv/dt rated Type BSO 615NV Parameter Continuous drain current, one channel active Pulsed drain current, one channel active Package SO 8 Symbol Ordering Code Q67041-S2844 Value 3.1 12.4 60 3.1 0.2 6 mJ A mJ kV/s Unit A Maximum Ratings, at T j = 25 C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 C Avalanche energy, single pulse I D = 3.1 A, V DD = 25 V, R GS = 25 Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 3.1 A, V DS = 20 V, di/dt = 200 A/s, T jmax = 150 C Gate source voltage Power dissipation, one channel active VGS Ptot Tj Tstg 20 2 -55 ... +150 -55 ... +150 55/150/56 V W C T A = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BSO 615NV Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 100 62.5 K/W Unit RthJS Rth(JA) Rth(JA) - Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Static Characteristics Drain- source breakdown voltage typ. 3 max. 4 Unit V(BR)DSS VGS(th) IDSS 60 2.1 V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 20 A Zero gate voltage drain current A 0.1 10 10 0.09 1 100 100 0.12 nA VDS = 60 V, V GS = 0 V, T j = 25 C VDS = 60 V, V GS = 0 V, T j = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, I D = 3.1 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 615NV Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 5.8 275 90 50 11 max. 340 120 65 17 ns S pF Unit gfs Ciss Coss Crss td(on) 2.5 - VDS2*I D*RDS(on)max , ID = 3.1 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, V GS = 10 V, ID = 3.1 A, RG = 33 Rise time tr - 25 40 VDD = 30 V, V GS = 10 V, ID = 3.1 A, RG = 33 Turn-off delay time td(off) - 25 40 VDD = 30 V, V GS = 10 V, ID = 3.1 A, RG = 33 Fall time tf - 35 55 VDD = 30 V, V GS = 10 V, ID = 3.1 A, RG = 33 Data Sheet 3 05.99 BSO 615NV Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Values Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold min. typ. 0.25 7.4 9.7 4.7 max. 0.3 9.3 12 - Unit QG(th) Qg(7) Qg V(plateau) - nC nC VDD = 40 V, ID = 0.1 A, VGS = 1 V Gate charge at Vgs=7V VDD = 40 V, ID = 3.1 A, VGS = 0 to 7 V Gate charge total VDD = 40 V, ID = 3.1 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 3.1 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 0.95 45 0.08 3.1 12.4 1.2 56 0.12 A TA = 25 C Inverse diode direct current,pulsed TA = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 6.2 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BSO 615NV Power Dissipation Drain current Ptot = f (TA) BSO 615NV ID = f (TA ) BSO 615NV 2.2 W 3.4 A 1.8 1.6 2.8 2.4 Ptot ID 1.4 1.2 2.0 1.6 1.0 0.8 0.6 0.4 1.2 0.8 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) parameter : D = 0 , TA = 25 C 10 A 2 BSO 615NV ZthJA = f(tp ) parameter : D = tp /T 10 2 BSO 615NV K/W /ID tp = 4.6s 10 s 10 1 = VD S R ID 100 s 10 0 1 ms Z thJA DS (o n) 10 1 D = 0.50 10 ms 0.20 10 0 0.10 single pulse 0.05 0.02 0.01 10 -1 DC 10 -2 -1 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 0 10 1 V 10 2 s 10 4 VDS tp Data Sheet 5 05.99 BSO 615NV Typ. output characteristics Drain-source on-resistance I D = f (VDS) parameter: tp = 80 s BSO 615NV RDS(on) = f (Tj) parameter : I D = 3.1 A, VGS = 10 V BSO 615NV 7.5 A Ptot = 2W l k jg hf ie 0.36 d VGS [V] a 4.0 6.0 5.5 5.0 c 0.28 c d e f g 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS(on) b 4.5 0.24 0.20 0.16 0.12 0.08 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 a h i 98% typ bj k l 0.04 0.00 -60 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 -20 20 60 100 C 180 VDS Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 pF Cis C 10 2 Cos Crs 10 1 0 5 10 15 20 25 V 35 VDS Data Sheet 6 05.99 BSO 615NV Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max 14 Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 A 5.0 V 4.4 4.0 A VGS(th) 10 3.6 3.2 2.8 2.4 max ID 8 6 2.0 typ 4 1.6 1.2 2 0.8 0.4 min 0 0 1 2 3 4 5 V 7 0.0 -60 -20 20 60 100 V 160 VGS Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 s 10 2 BSO 615NV A 10 1 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 615NV Avalanche Energy EAS = f (Tj) parameter: ID = 3.1 A, VDD = 25 V RGS = 25 65 mJ Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 3.1 A BSO 615NV 16 V 55 50 45 12 VGS EAS 40 35 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 C 0,2 VDS max 0,8 VDS max 6 4 2 160 0 0 2 4 6 8 10 12 Drain-source breakdown voltage Tj nC 15 Q Gate V(BR)DSS = f (Tj) BSO 615NV 72 V 68 66 64 62 60 58 56 54 -60 V(BR)DSS -20 20 60 100 C 180 Tj Data Sheet 8 05.99 |
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