 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Philips Semiconductors Product specification PowerMOS transistor PHP33N10 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 100 34 175 0.057 UNIT V A W PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ID IDM PD PD/Tmb VGS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Operating junction and storage temperature range CONDITIONS Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C Tmb > 25 C MIN. - 55 MAX. 34 24 136 150 1.167 30 175 UNIT A A A W W/K V C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1 UNIT K/W K/W April 1998 1 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor PHP33N10 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL V(BR)DSS V(BR)DSS / Tj RDS(ON) VGS(TO) gfs IDSS IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss PARAMETER Drain-source breakdown voltage Drain-source breakdown voltage temperature coefficient Drain-source on resistance Gate threshold voltage Forward transconductance Drain-source leakage current Gate-source leakage current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA VGS = 10 V; ID = 17 A VDS = VGS; ID = 0.25 mA VDS = 50 V; ID = 17 A VDS = 100 V; VGS = 0 V VDS = 80 V; VGS = 0 V; Tj = 150 C VGS = 30 V; VDS = 0 V ID = 17 A; VDD = 80 V; VGS = 10 V MIN. 100 2.0 12 TYP. 0.15 0.052 3.0 16 1 100 10 42 8 20 18 40 125 50 3.5 4.5 7.5 1500 450 130 MAX. 0.057 4.0 25 250 100 50 11 30 UNIT V V/K V S A A nA nC nC nC ns ns ns ns nH nH nH pF pF pF VDD = 50 V; ID = 17 A; RG = 9.1 ; RD = 2.9 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL IS ISM VSD trr Qrr PARAMETER Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tmb = 25C Tmb = 25C IS = 34 A; VGS = 0 V IS = 17 A; VGS = 0 V; dI/dt = 100 A/s MIN. TYP. 200 1.0 MAX. 34 136 1.5 UNIT A A V ns C April 1998 2 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor PHP33N10 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth j-mb / (K/W) BUKx56-lv 1 D= 0.5 0.1 0.2 0.1 0.05 0.02 P D 0 tp tp T t 1E+01 0.01 D= 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 1E-05 1E-03 t/s T 1E-01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A VGS / V = 15 20 10 120 110 100 90 80 70 60 50 40 30 20 10 0 70 60 50 40 BUK456-100A 8 7 6 30 20 5 10 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 4 0 2 4 VDS / V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V ID / A BUK456-100A,B Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS RDS(ON) / Ohm 4.5 5 5.5 6 6.5 7 BUK456-100A VGS / V = 7.5 8 10 0.1 20 1000 0.2 100 RD S N (O )= VD ID S/ A B tp = 10 us 100 us 10 DC 1 ms 10 ms 100 ms 1 0 1 10 VDS / V 100 1000 0 20 40 ID / A 60 80 Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS April 1998 3 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor PHP33N10 70 60 50 40 30 20 ID / A Tj / C = 25 BUK456-100A 4 VGS(TO) / V max. 150 typ. 3 min. 2 1 10 0 0 0 2 4 VGS / V 6 8 10 -60 -20 20 60 Tj / C 100 140 180 Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS ID / A SUB-THRESHOLD CONDUCTION gfs / S 20 BUK456-100A 1E-01 1E-02 1E-03 2% typ 98 % 10 1E-04 1E-05 0 0 20 40 ID / A 60 1E-06 0 1 2 VGS / V 3 4 Fig.8. Typical transconductance. gfs = f(ID); parameter Tj a Normalised RDS(ON) = f(Tj) Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10000 C / pF BUK4y6-100 Ciss 1000 Coss 100 Crss -60 -20 20 60 Tj / C 100 140 180 10 0 20 VDS / V 40 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 17 A; VGS = 10 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz April 1998 4 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor PHP33N10 12 10 8 6 4 2 0 VGS / V VDS / V =20 BUK456-100 80 120 110 100 90 80 70 60 50 40 30 20 10 0 EAS, Normalised unclamped inductive energy (%) 0 20 QG / nC 40 20 40 60 80 Starting Tj ( C) 100 120 140 160 180 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); parameter VDS Normalised Drain-source breakdown voltage V(BR)DSS @ Tj V(BR)DSS @ 25 C Fig.16. Normalised unclamped inductive energy. EAS% = f(Tj) 1.15 1.1 1.05 1 0.95 0.9 + L VDS VGS 0 RGS T.U.T. R 01 shunt VDD -ID/100 0.85 -100 -50 0 50 Tj, Junction temperature (C) 100 150 Fig.14. Normalised drain-source breakdown voltage. V(BR)DSS/V(BR)DSS 25 C = f(Tj) IF / A BUK456-100A Fig.17. Unclamped inductive test circuit. 2 EAS = 0.5 LID V(BR)DSS /(V(BR)DSS - VDD ) 70 60 50 40 Tj / C = 150 30 20 10 0 0 1 VSDS / V 25 2 Fig.15. Source-Drain diode characteristic. IF = f(VSDS); parameter Tj April 1998 5 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor PHP33N10 MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1998 6 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor PHP33N10 DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 7 Rev 1.100 |
Price & Availability of PHP33N10
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |