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| ON Semiconductort NPN PNP Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. MJD122* MJD127* *ON Semiconductor Preferred Device * Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix) Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc Complementary Pairs Simplifies Designs SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS CASE 369A-13 0.063 1.6 inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 November, 2001 - Rev. 5 Publication Order Number: MJD122/D 0.243 6.172 II I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII III I I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB MJD122 MJD127 100 100 5 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current 8 16 120 mAdc Watts W/_C Watts W/_C _C Total Power Dissipation @ TC = 25_C Derate above 25_C PD PD 20 0.16 Total Power Dissipation* @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 1.75 0.014 TJ, Tstg -65 to +150 CASE 369-07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.190 4.826 THERMAL CHARACTERISTICS Characteristic Symbol RJC RJA Max Unit Thermal Resistance, Junction to Case 6.25 71.4 _C/W _C/W Thermal Resistance, Junction to Ambient* 0.118 3.0 0.100 2.54 0.165 4.191 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I IIII I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIII I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS PD, POWER DISSIPATION (WATTS) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Small-Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain-Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Base-Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) Base-Emitter Saturation Voltage (1) (IC = 8 Adc, IB = 80 mAdc) Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Characteristic 0.5 1.5 15 TA TC 2.5 25 0 1 10 2 20 0 5 25 50 TA SURFACE MOUNT MJD122 MJD127 Figure 1. Power Derating http://onsemi.com TC 75 100 T, TEMPERATURE (C) MJD127 MJD122 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO |hfe| Cob hFE hfe 125 1000 100 Min 300 100 -- -- -- -- -- -- -- -- -- 4 150 12,000 -- Max 300 200 2.8 4.5 10 10 -- -- -- 2 4 2 mAdc Adc Adc MHz Unit Vdc Vdc Vdc Vdc pF -- -- 2 MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 20,000 10,000 7000 5000 3000 2000 1000 700 500 300 200 0.1 VCE = 4 V 20,000 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 25C -55C TJ = 150C NPN MJD122 VCE = 4 V hFE , DC CURRENT GAIN TJ = 150C 25C -55C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 2.6 2.2 1.8 1.4 1 0.3 IC = 2 A 4A 6A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 3 TJ = 25C 2.6 2.2 1.8 1.4 1 0.3 IC = 2 A 4A 6A 0.5 0.7 1 2 3 5 7 10 20 30 0.5 0.7 1 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 TJ = 25C 2.5 V, VOLTAGE (VOLTS) 2 1.5 1 0.5 0.1 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) 3 TJ = 25C 2.5 2 1.5 1 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages http://onsemi.com 3 MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 VB for VBE VC for VCE(sat) -55C to 25C 25C to 150C 25C to 150C *IC/IB hFE/3 +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 VB for VBE 25C to 150C -55C to 25C 5 7 10 *VC for VCE(sat) -55C to 25C *IC/IB hFE/3 25C to 150C NPN MJD122 -55C to 25C 1 23 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP) 5 7 10 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) Figure 5. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 TJ = 150C 100C 25C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 REVERSE VCE = 30 V FORWARD 105 104 103 102 101 100 100C REVERSE FORWARD VCE = 30 V TJ = 150C 10-1 +0.6 +0.4 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) +1.2 +1.4 Figure 6. Collector Cut-Off Region 10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 PNP NPN 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4 Vdc IC = 3 Adc C, CAPACITANCE (pF) 300 TJ = 25C 200 Cob 100 70 50 30 0.1 Cib PNP NPN 0.2 0.5 1 2 5 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Small-Signal Current Gain http://onsemi.com 4 Figure 8. Capacitance MJD122 MJD127 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA V2 APPROX +8 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1% TUT RB 51 D1 +4V 8 k 120 VCC -30 V RC SCOPE t, TIME ( s) 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 tr td @ VBE(off) = 0 V 5 7 10 ts PNP NPN tf 25 s FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) Figure 9. Switching Times Test Circuit Figure 10. Switching Times r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) 0.1 0.07 0.05 0.03 0.02 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 Figure 11. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 15 10 5 3 2 1 TJ = 150C 500 s 1 ms 100 s 5 ms 0.5 0.3 0.2 0.1 0.05 0.03 0.02 BONDING WIRE LIMIT THERMAL LIMIT TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 30 dc 50 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea http://onsemi.com 5 MJD122 MJD127 PNP COLLECTOR NPN COLLECTOR BASE BASE 8k 120 8k 120 EMITTER EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 MJD122 MJD127 PACKAGE DIMENSIONS DPAK CASE 369A-13 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T http://onsemi.com 7 MJD122 MJD127 PACKAGE DIMENSIONS DPAK CASE 369-07 ISSUE M B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 A 1 2 3 S -T- SEATING PLANE K F D G 3 PL M J H 0.13 (0.005) T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJD122/D |
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