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| UNISONIC TECHNOLOGIES CO., LTD 2SC5027 HIGH VOLTAGE AND HIGH RELIABILITY . NPN SILICON TRANSISTOR FEATURES * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220 1 TO-220F *Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC5027-x-TA3-T 2SC5027L-x-TA3-T 2SC5027-X-TF3-T 2SC5027L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 2SC5027L-x-TA3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-027,C 2SC5027 ABSOLUTE MAXIMUM RATINGS (Tc = 25 ) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 850 V Collector-Emitter Voltage VCEO 800 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Power Dissipation PC 50 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25 , unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEX(SUS) L=2mH, Clamped ICBO VCB=800V, IE=0 IEBO VEB=5V, IC=0 hFE1 VCE=5V, IC=0.2A VCE=5V, IC=1A hFE 2 VCE (SAT) IC=1.5A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tS RL=200 tF MIN 850 800 7 800 10 10 40 2 1.5 60 15 0.5 3 0.3 TYP MAX UNIT V V V V A A 10 8 V V pF MHz s s s CLASSIFICATION of hFE1 RANK RANGE N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-027,C 2SC5027 TYPICAL CHARACTERISTICS Static Characteristic Collector Current vs. Collector-Emitter Voltage 4.0 3.6 10 NPN SILICON TRANSISTOR Switching Time Time vs. Collector -Emitter Voltage Collector Current, IC (A) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 IB=10mA IB=150 mA s) IB=100 mA IB=50mA 3.2 TIME, tON, tstg, tF 1 0.1 Vcc=400V 5.IB1= - 2.5.IB2=Ic 5 6 7 8 9 10 0.01 0.1 1ms 1 10 Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) Collector Current vs. Base-Emitter Voltage 4.0 Saturation Voltage vs. Collector Current 10 Ic=5IB VCE=5V 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 1.2 Saturation Voltage, VCE(SAT) (V) 3.5 Collector Current, Ic (A) 1 VBE(SAT) 0.1 VCE(SAT) 0.2 0.4 0.6 0.8 1.0 0.01 0.01 100us 0.1 1ms 1 10 Base-Emitter Voltage, VBE (V) Collector Current, IC (A) Safe Operating Area Collector Current vs. Collector-Emitter Voltage 100 ICP (MAX ) DC Current Gain vs. Collector Current 1000 VCE=5V 10 0 10 100 Collector Current, Ic (A) DC Current Gain, hFE s IC(MAX ) (Continuous ) 1 C D 10 0.1 1m s 10 m s 0.01 1 0.01 100us 0.1 1ms 1 10 1E-s 1 10 100 1000 5000 Collector Current, IC (A) Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-027,C 2SC5027 TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR Power vs. Temperature Derating Curve 80 70 Power Dissipation, Pc (W) Reverse Bias Operating Area Collector Current vs. Collector-Emitter Voltage 100 IB2=-0.3A 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Collector Current, Ic (A) 10 1 0.1 0.01 10 100us 100 1ms 1000 5000 Temperature, TC ( ) Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-027,C |
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