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| N-CHANNEL 30V - 0.0045 - 17A SO-8 STripFETTM II MOSFET FOR DC-DC CONVERSION TYPE STS17NF3LL s s s s STS17NF3LL VDSS 30 V RDS(on) <0.0055 ID 17 A TYPICAL RDS(on) = 0.0045 @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. Such features make it the best choice in high efficiency DC-DC converters for Telecom and computer industries. APPLICATIONS s DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE s SYNCHRONOUS RECTIFIER SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 30 30 18 17 12 68 3.2 Unit V V V A A A W (*) Pulse width limited by safe operating area. March 2003 . 1/8 STS17NF3LL THERMAL DATA Rthj-amb Rthj-lead Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Operating Junction Temperature Storage Temperature [ Max Max 47 16 -55 to 175 -55 to 175 C/W C/W C C (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 18 V Min. 30 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 8.5 A ID = 8.5 A Min. 1 0.0045 0.0055 0.0055 0.007 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V ID = 8.5 A Min. Typ. 37 2160 614 98 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/8 STS17NF3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 8.5 A VDD = 15 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) VDD=24V ID=12.5A VGS=4.5 V (see test circuit, Figure 2) Min. Typ. 23.5 39 26 7 12 35 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 8.5 A VDD = 15 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 47.5 37 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A VGS = 0 39 45 2.3 Test Conditions Min. Typ. Max. 17 68 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 17 A VDD = 15 V Tj = 150C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS17NF3LL Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS17NF3LL Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STS17NF3LL Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STS17NF3LL SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS17NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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