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| (R) MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON s APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (I C = 0) Collector Current Base Current Total Power Dissipation at T case 25 o C Storage Temperature Max Operating Junction Temperature Value 80 80 5 4 0.1 40 -65 to 150 150 Unit V V V A A W o o C C September 2003 1/4 MJE802 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 3.13 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO T case = 100 o C V CE = rated V CEO V EB = 5 V I C = 50 mA IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A I C = 1.5 A f = 1 MHz I B = 40 mA I B = 30 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V 100 750 1 80 3 2.5 3 2.5 Min. Typ. Max. 100 500 100 2 Unit A A A mA V V V V V Collector-Emitter V CEO(sus) Sustaining Voltage (I B = 0) V CE(sat) V BE h FE hfe Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain * Pulsed: Pulse duration = 300s, duty cycle 1.5% Safe Operating Area 2/4 MJE802 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10o 3 7.4 10.5 0.7 0.40 2.4 1.0 15.4 2.2 4.4 3.8 3.2 2.54 0.084 0.05 0.011 10o 0.118 TYP. MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 0.126 0.100 inch TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 DIM. 1: Base 2: Collector 3: Emitter 0016114/B 3/4 MJE802 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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