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MBD701, MMBD701LT1 Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features http://onsemi.com MARKING DIAGRAMS TO-92 2-Lead CASE 182 STYLE 1 1 2 2 CATHODE 1 ANODE * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.0 pF @ VR = 20 V High Reverse Voltage - to 70 V Low Reverse Leakage - 200 nA (Max) Pb-Free Packages are Available MBD 701 AYWW G G MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation MBD701 @ TA = 25C MMBD701LT Derate above 25C MBD701 MMBD701LT TJ Tstg Symbol VR PF 280 200 2.8 2.0 -55 to +125 -55 to +150 mW mW/C C C Value 70 Unit V 1 2 3 SOT-23 (TO-236) CASE 318 STYLE 6 1 ANODE 5H M G G 1 3 CATHODE Operating Junction Temperature Range Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week 5H = Device Code (SOT-23) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 35 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 70 - - - - Typ - 0.5 9.0 0.42 0.7 Max - 1.0 200 0.5 1.0 Unit V pF ORDERING INFORMATION Device MBD701 MBD701G MMBD701LT1 Package TO-92 TO-92 (Pb-Free) SOT-23 Shipping 1,000 Units / Box 1,000 Units / Box 3,000 / Tape & Reel nAdc Vdc Vdc MMBD701LT1G MMBD701LT3 MMBD701LT3G SOT-23 3,000 / Tape & Reel (Pb-Free) SOT-23 10,000/T ape & Reel SOT-23 10,000/T ape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 October, 2006 - Rev. 4 Publication Order Number: MBD701/D MBD701, MMBD701LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 C T, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500 t , MINORITY CARRIER LIFETIME (ps) 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 TA = 100C 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 1.0 10 TA = 85C TA = -40C 0.1 TA = 75C 1.0 0.01 TA = 25C TA = 25C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 0 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 3. Reverse Leakage Figure 4. Forward Voltage IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) PADS DUT SAMPLING OSCILLOSCOPE (50 W INPUT) Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 2 MBD701, MMBD701LT1 PACKAGE DIMENSIONS TO-92 (TO-226AC) CASE 182-06 ISSUE L A B SEATING PLANE R D P L K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --- 0.250 --- 0.080 0.105 --- 0.050 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --- 6.35 --- 2.03 2.66 --- 1.27 2.93 --- 3.43 --- XX D G H V C N SECTION X-X DIM A B C D G H J K L N P R V 1 2 N http://onsemi.com 3 EE EE STYLE 1: PIN 1. ANODE 2. CATHODE MBD701, MMBD701LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MBD701/D |
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