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| Bulletin I25201 rev. B 03/03 80RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features Hermetic glass-metal seal International standard case TO-209AC (TO-94) 80A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 80RIA 80 85 125 1900 1990 18 16 400 to 1200 110 - 40 to 125 Unit A C A A A KA2s KA2s V s C case style TO-209AC (TO-94) www.irf.com 1 80RIA Series Bulletin I25201 rev. B 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 40 80RIA 80 120 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 800 1200 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 I DRM/I RRM max. @ TJ = 125C mA 15 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current 80RIA 80 85 125 1900 1990 1600 1675 Units A C A Conditions 180 conduction, half sine wave DC @ 75C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. A t = 8.3ms t = 10ms t = 8.3ms t = 10ms I2t Maximum I2t for fusing 18 16 12.7 11.7 KA2 s t = 8.3ms t = 10ms t = 8.3ms I 2t Maximum I2t for fusing 180.5 0.99 KA2s t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 1.13 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.84 1.60 200 400 mA T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 250A, TJ = 25C tp = 10ms sine pulse 2.29 2 www.irf.com 80RIA Series Bulletin I25201 rev. B 03/03 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current 300 A/s 80RIA Units Conditions TJ = 125C, Vd = rated VDRM, ITM = 2xdi/dt snubber 0.2F, 15, Gate pulse: 20V, 65, tp = 6s, tr= 0.5s Per JEDEC Standard RS-397, 5.2.2.6. Gate pulse: 10V, 15 source, tp = 6s, tr = 0.1s, td tq Typical delay time 1 s Vd = rated VDRM, ITM = 50Adc, TJ = 25C. ITM = 50A, TJ = TJ max, di/dt = -5A/s min., VR = 50V, dv/dt = 20V/s, Gate bias: 0V 25, tp = 500s Typical turn-off time 110 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 80RIA 500 15 Units V/s mA Conditions TJ = 125C exponential to 67% rated VDRM TJ = 125C rated V DRM /V RRM applied Triggering Parameter PGM Maximum peak gate power 80RIA 12 3 3 20 Units W A Conditions TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage IGT Max. DC gate current required to trigger V 10 270 120 60 mA TJ = TJ max, tp 5ms TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C V TJ = 25C TJ = 125C mA TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 6V anode-to-cathode applied VGT Max. DC gate voltage required to trigger 3.5 2.5 1.5 IGD VGD DC gate current not to trigger 6 DC gate voltage not to trigger 0.25 V www.irf.com 3 80RIA Series Bulletin I25201 rev. B 03/03 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range 80RIA -40 to 125 -40 to 150 0.30 Units C Conditions RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10% DC operation K/W 0.1 15.5 (137) 14 (120) Nm (lbf-in) g Mounting surface, smooth, flat and greased Non lubricated threads Lubricated threads wt Approximate weight Case style 130 TO-209AC(TO-94) See Outline Table RthJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.042 0.050 0.064 0.095 0.164 0.030 0.052 0.070 0.100 0.165 K/W Conditions T J = T J max. Ordering Information Table Device Code 8 1 0 2 RIA 120 3 4 1 2 - ITAV x 10A 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 3 4 5 - RIA = Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) None = Stud base 1/2"-20UNF- 2A threads NOTE: For Metric Device M12 x 1.75 E6 Contact factory 4 www.irf.com 80RIA Series Bulletin I25201 rev. B 03/03 Outline Table GLASS METAL SEAL 16.5 (0.65) MAX. 8.5 (0.3) DIA. 4.3 (0.17) DIA. 37 )M IN. ( 0. 9 .5 2.5 (0.10) MAX. C.S. 16mm 2 (.025 s.i.) RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 20 (0 . FLEXIBLE LEAD 79 )M IN. Fast-on Terminals AMP. 280000-1 REF-250 55 (2.17) MIN. 215 (8.46) RED SHRINK WHITE SHRINK 24 (0.94) MAX. 10 (0.39) 10 (0.39) MAX. 23.5 (0.92) MAX. DIA. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A * 29.5 (1.16) MAX. Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) * FOR METRIC DEVICE: M12 X 1.75 E6 CONTACT FACTORY Maximum Allowable Case T emperature (C) 130 80RIA S eries RthJC (DC) = 0.30 K/ W 120 Maximum Allowable Case T emperature (C) 130 120 110 80RIA S eries RthJC (DC) = 0.30 K/ W 110 Conduc tion Angle Conduction Period 100 90 30 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 100 30 60 90 120 180 90 60 90 120 180 DC 80 0 10 20 30 40 50 60 70 80 90 Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com 5 80RIA Series Bulletin I25201 rev. B 03/03 Maximum Average On-s tate Power Loss (W) 120 hS Rt 110 100 90 80 70 60 50 180 120 90 60 30 RMSLimit 6 0. W K/ A = W K/ 0.4 1 K/ W -D elt a 1.4 K/ W 2K /W R 40 30 20 Conduction Angle 3 K/ W 10 0 0 10 20 30 40 80RIA S eries T = 125C J 50 60 70 80 0 5 K/ W 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Los (W) s 180 160 140 120 100 80 60 40 20 0 DC 180 120 90 60 30 R th S A = 0. 6 0. 4 K/ W K/ W -D el ta 1K /W R RMSLimit Conduc tion Period 1.4 K/ W 2 K/ W 3 K/ W 80RIA S eries T = 125C J 0 20 40 60 80 100 120 5 K/ W 140 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 4 - On-state Power Loss Characteristics Peak Half S Wave On-s ine tate Current (A) 1600 At Any R ated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 1400 Peak Half S Wave On-state Current (A) ine 1800 2000 Maximum Non Repetitive S urge Current 1900 Versus Pulse T rain Duration. Control 1800 Of Conduction May Not Be Maintained. Initial T = 125C 1700 J No Voltage Reapplied 1600 Rated VRRM Reapplied 1500 1400 1300 1200 1100 1000 900 80RIA S eries 800 700 0.01 1200 1000 80R S IA eries 800 1 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) 0.1 1 Puls T e rain Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 6 www.irf.com 80RIA Series Bulletin I25201 rev. B 03/03 10000 Instantaneous On-state Current (A) 1000 100 T = 25C J T = 125C J 10 80R S IA eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 1 S teady S tate Value R thJC = 0.30 K/ W (DC Operation) 0.1 T ransient T hermal Impedance Z thJC (K/ W) 0.01 80RIA S eries 0.001 0.0001 0.001 0.01 0.1 1 10 S uare Wave Pulse Duration (s) q Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) R ecommended load line for rated di/ dt : 20V, 30ohms; tr<=0.5 s b) R ecommended load line for <=30% rated di/ dt : 20V, 65ohms 10 tr<=1 s (1) PGM = 100W, tp = 500s (2) PGM = 50W, tp = 1ms (3) PGM = 20W, tp = 2.5ms (4) PGM = 10W, tp = 5ms T j=-40 C T j=25 C T j=125 C 1 (a) (b) (1) (2) (3) (4) VGD 0.1 0.001 IGD 0.01 Device: 80R S IA eries 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 7 80RIA Series Bulletin I25201 rev. B 03/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03 8 www.irf.com |
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