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| Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM Maximum Ratings 1000 1000 20 30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W C C C TO-247 AD (IXTH) D (TAB) TO-268 Case Style TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 18 TC = 25C 6 200 3 60 -55 ... +150 150 -55 ... +150 G S (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque (TO-247) TO-268 TO-247 1.13/10 Nm/lb.in. 4 6 300 g g C Features Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard packages High voltage, Low RDS (on) HDMOSTM Rugged polysilicon gate Fast switching times process cell structure Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 100 TJ = 25C TJ = 125C 25 500 11 V V nA A A Applications Switch-mode VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 25 A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V DC choppers High frequency Advantages and resonant-mode power supplies Flyback inverters matching VGS = 10 V, ID = 1.0A Pulse test, t 300 s, duty cycle d 2 % Space savings High power density 98886 (1/2) (c) 2002 IXYS All rights reserved IXTH 1N100 IXTT 1N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 0.8 1.5 480 VGS = 0 V, VDS = 25 V, f = 1 MHz 45 15 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A RG = 18, (External) 19 20 18 23 VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A 4.5 14 2.3 TO-247 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 1.0A, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.5 6 1.8 710 A A V ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V TO-268 Outline Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 5,187,117 5,237,481 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 6,306,728B1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,486,715 5,381,025 |
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