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 ISP321-1X, ISP321-2X, ISP321-4X ISP321-1, ISP321-2, ISP321-4
HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P01102465 Fimko - Certificate No. FI18162 Semko - Reference No. 0202041/01-25 Demko - Certificate No. 311161-01 l BSI approved - Certificate No. 8001 DESCRIPTION The ISP321-1 , ISP321-2 , ISP321-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio ( 50% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO ( 80Vmin ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances
OPTION SM
SURFACE MOUNT OPTION G
ISP321-1X ISP321-1
2.54 7.0 6.0 1 2
Dimensions in mm
4 3
1.2 5.08 4.08 7.62 4.0 3.0 0.5 3.0 13 Max 0.26
ISP321-2X ISP321-2
0.5 2.54
3.35
1 7.0 6.0 2 3 4 7.62 4.0 3.0 0.5
8 7 6 5
1.2 10.16 9.16
3.0 3.35 0.5
13 Max 0.26 1 2 3 4 5 7.0 6.0 6 7 8 7.62 13 Max 0.26 16 15 14 13 12 11 10 9
ISP321-4X ISP321-4
2.54
7.62
1.2 20.32 19.32 4.0 3.0 0.5 3.0 0.5 3.35
0.6 0.1 10.46 9.86
1.25 0.75
0.26 10.16
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com
24/3/03
DB91075m-AAS/A3
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW
OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation
(derate linearly 2.67mW/C above 25C)
80V 6V 150mW
200mW
ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) 80 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) ISP321-1, ISP321-2, ISP321-4 CTR selection available GB BL GB Collector-emitter Saturation VoltageVCE (SAT) GB Input to Output Isolation Voltage VISO 50 100 200 30 MIN TYP MAX UNITS 1.0 1.15 1.3 10 V
A
TEST CONDITION IF = 10mA VR = 4V IC = 0.5mA IE = 100A VCE = 48V 5mA IF , 5V VCE 1mA IF , 0.4V VCE 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC See note 1
V V nA
100
Coupled
600 600 600 0.4 0.4
5300 7500
% % % % V V VRMS VPK
s s
Input-output Isolation Resistance RISO 5x1010 Response Time (Rise, tr) 4 Response Time (Fall, tf) 3
VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
24/3/03
DB91075m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) 25 Collector current IC (mA) 150 20 15 10 5 0 -30 0 25 50 75 100 125 0
Collector Current vs. Low Collector-emitter Voltage TA = 25C 50 40 30 20 10 5 IF = 2mA
100
50
0 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 60
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage VCE ( V ) Collector Current vs. Collector-emitter Voltage 50 50 30 Collector current IC (mA) 40 30 20 10 0 20 15 10 TA = 25C
50 Forward current IF (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 IF = 5mA IC = 1mA Current transfer ratio CTR (%) 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( C )
24/3/03
IF = 5mA
0
2
4
6
8
10
Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 Forward current IF (mA)
DB91075m-AAS/A3
Collector-emitter saturation voltage VCE(SAT) (V)
VCE = 5V TA = 25C


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