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PD - 95093A
IRLR8103VPBF
* * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications
D
* 100% RG Tested * Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.
G
D-Pak
S
DEVICE CHARACTERISTICS
RDS(on) QG QSW QOSS
IRLR8103V 7.9 m 27 nC 12 nC 29nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS > 10V) Pulsed Drain Current TC = 25C TC= 90C
Symbol
VDS VGS ID IDM PD TJ , TSTG IS ISM
IRLR8103V
30 20 91 63 363 115 60 -55 to 150 91 363
Units
V
TC = 25C Power Dissipation eAAAAAAAAAAAAA TC = 90C
Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current
A
W C A
Thermal Resistance
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case
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h
eh
Symbol
RJA RJC
Typ.
--- ---
Max.
50 1.09
Units
C/W
1
12/0604
IRLR8103VPBF
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current
Symbol Min Typ Max Units
BVDSS RDS(on) VGS(th) IDSS 30 --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- 0.8 --- --- --- --- --- --- --- --- 6.9 7.9 --- --- --- --- 9.0 10.5 3.0 50 20 V m V A A nA
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 15A VGS = 4.5V, ID = 15A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, TJ = 100C VGS = 20V VGS = 5V, ID = 15A, VDS = 16V VGS = 5V, VDS < 100mV
d d
VDS = VGS, ID = 250A
Gate-Source Leakage Current Total Gate Charge, Control FET Total Gate Charge, Synch FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
IGSS QG QG QGS1 QGS2 QGD QSW QOSS RG td(on) tr td(off) tf Ciss Coss Crss
--- 100 --- 100 27 23 4.7 2.0 9.7 12 29 --- 10 9 24 18 --- --- --- --- --- --- --- 3.1 --- --- --- ---
nC
VDS = 16V, ID = 15A
VDS = 16V, VGS = 0 VDD = 16V ns ID = 15A VGS = 5.0V Clamped Inductive Load pF VGS = 16V, VGS=0
2672 --- 1064 --- 109 ---
Source-Drain Rating & Characteristics
Parameter
Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky)
Symbol Min Typ Max Units
VSD Qrr Qrr(s) --- --- --- 0.9 103 96 1.3 --- --- V nC nC
Conditions
IS = 15Ad, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IF = 15A di/dt = 700A/s , (with 10BQ040) VDS= 16V, VGS = 0V, IF = 15A
f
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
2
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IRLR8103VPBF
1000
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
2.7V
2.7V
10
10
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
1000
2.0
ID = 15A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
1.5
100
1.0
0.5
10 2.0
V DS= 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRLR8103VPBF
5000
VGS , Gate-to-Source Voltage (V)
4000
VGS = Ciss = Crss = Coss =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
6
ID = 15A
5
V DS= 24V V DS= 15V
C, Capacitance (pF)
4
3000
Ciss
3
2000
Coss
2
1000
1
0
Crss
1 10 100
0
VDS , Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
10000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150 C
ID , Drain Current (A)
100
1000 10us
10
100 100us 1ms
TJ = 25 C
1
10
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6 2.0 2.4
1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR8103VPBF
100
V DS
RD
LIMITED BY PACKAGE
80
VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+ VDD
ID , Drain Current (A)
-
60
40
Fig 10a. Switching Time Test Circuit
VDS 90%
20
0
25
50
TC , Case Temperature ( C)
75
100
125
150
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR8103VPBF
R DS ( on ) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
0.016
0.014
0.014
0.012
0.012 VGS = 4.5V
0.010
0.010
ID = 15A
0.008
VGS = 10V
0.008
0.006 0 50 100 150 200 250 300 350 ID , Drain Current ( A )
0.006 0.0 2.0 4.0 6.0 8.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
VGS
3mA
Charge
IG ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
6
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IRLR8103VPBF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 12 916A 34
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 12 34
DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S ITE CODE
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7
IRLR8103VPBF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04
8
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