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 PD -95171
IRG4PC40SPBF
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard TO-247AC package * Lead-Free
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 31A
n-channel
Benefits
* Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600 60 31 120 120 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
V A
V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
--- 0.24 --- 6 (0.21)
Max.
0.77 --- 40 ---
Units
C/W g (oz)
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1
04/23/04
IRG4PC40SPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.75 -- 1.32 VCE(ON) Collector-to-Emitter Saturation Voltage -- 1.68 -- 1.32 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -9.3 gfe Forward Transconductance U 12 21 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES V(BR)ECS Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A -- IC = 60A See Fig.2, 5 V -- IC = 31A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 100 14 34 22 18 650 380 0.45 6.5 6.95 23 21 1000 940 12 13 2200 140 26 Max. Units Conditions 150 IC = 31A 21 nC VCC = 400V See Fig. 8 51 VGE = 15V -- -- TJ = 25C ns 980 IC = 31A, VCC = 480V 570 VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 10, 11, 13, 14 9.9 -- TJ = 150C, -- IC = 31A, VCC = 480V ns -- VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 13, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot.
R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC40SPBF
80
Fo r bo th:
T rian g ular wa ve :
60
Load C urrent (A )
D u ty cy c le : 5 0 % TJ = 1 2 5 C T s in k = 90 C G a te d riv e a s s p e c ifie d P ow er D is sip atio n = 35 W
C la m p v o lta ge : 8 0% o f rated
S q u a re w a v e :
40
60 % of rate d v o ltage
20
Id e al d io d e s
0 0.1 1 10
A
100
f, Fre q u e n cy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
1000
IC , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
100
T J = 150C
10
TJ = 25C TJ = 150C
10
TJ = 25C
1 0.1 1
V G E = 15V 20s PULSE WIDTH
10
A
1 5 6 7
V C C = 50V 5s PULSE WIDTH A
8 9 10
VC E , Collector-to-Emitter Voltage (V)
VG E , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics www.irf.com
Fig. 3 - Typical Transfer Characteristics 3
IRG4PC40SPBF
60
V C E , C ollec to r-to -E m itte r V oltage (V )
V G E = 15V
2.0
Maximum DC Collector Current (A)
VGE = 15V 8 0 s P U L S E W ID T H
50
I C = 62A
40
30
1.5
20
I C = 31A
10
I C = 16A
1.0 -60 -40 -20 0 20 40 60 80
0 25 50 75 100 125
A
150
A
100 120 140 160
TC , Case Temperature (C)
T J , Ju n c tio n T e m p e ra tu re (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
1
Therm al Response (Z th JC )
D = 0 .5 0
0.2 0
0 .1
0.1 0 0 .05 0.0 2 0.0 1 SIN G LE P UL SE (T H ER M A L R E SP O NS E )
PD M
t
1 t2
N o te s: 1 . D u ty fa c to r D = t
1
/ t2
0 .0 1 0 .0 0 0 0 1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R ectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
IRG4PC40SPBF
4000
V GE , G a te -to -E m itter V oltage (V )
A
V GE = C ie s = C re s = C oes =
0V , f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C g c
20
VC E = 4 0 0 V IC = 31A
16
C , C a pa cita nce (pF )
3000
C ie s
2000
12
8
C o es
1000
C res
0 1 10
4
0 0 20 40 60 80 100
A
120
100
V C E , C ollector-to-Em itter Vo ltag e (V)
Q g , Total G a te C ha rge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
7.8
T o ta l S w itching L oss es (m J)
7.7
T otal Sw itc hing Lo sse s (m J)
V CC VGE TJ IC
= 480V = 15V = 25 C = 31A
100
R G = 10 V G E = 1 5V V C C = 4 80 V I C = 62A
7.6
I C = 31A
10
7.5
IC = 16A
7.4
7.3 0 10 20 30 40 50
A
60
1 -60 -40 -20 0 20 40 60 80 100 120 140
A 160
R G , G ate R esistan ce ()
TJ , Ju nctio n Te m p erature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4PC40SPBF
30
I C , C ollecto r-to -Em itter Cu rrent (A)
Total Switching Losses (mJ)
RG TJ V CC V GE
= = = =
10 150C 480V 15V
1000
VG E E 2 0V G= T J = 12 5 C
20
100
S A FE O P E R A TIN G A R E A
10
10
0 0 10 20 30 40 50 60 70
A
1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
6
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IRG4PC40SPBF
L 50V 1 00 0V VC *
D .U .T.
RL = 0 - 480V
480V 4 X IC@25C
480F 960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S VC D .U .T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type as D.U.T., VC = 480V
Q
R
9 0%
S
1 0% 90 %
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
10 % IC 5% t d (o n )
tr E on E ts = ( Eo n +E o ff )
tf t=5 s E o ff
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7
IRG4PC40SPBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
E XAMPLE : T HIS IS AN IRF PE 30 WIT H AS S EMB LY L OT CODE 5657 AS S E MB LE D ON WW 35, 2000 IN T HE AS S E MB L Y LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE
PART NUMB ER
IR F PE 30
56 035H 57
DAT E CODE YE AR 0 = 2000 WE E K 35 L INE H
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/04
8
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