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| PD - 95447 IRG4BC40FPBF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 49 27 200 200 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.50 2.0 (0.07) Max. 0.77 80 Units C/W g (oz) www.irf.com 1 6/22/04 IRG4BC40FPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.70 1.50 VCE(ON) Collector-to-Emitter Saturation Voltage 1.85 1.56 VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage -12 gfe Forward Transconductance 9.2 12 ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V VGE = 0V, IC = 250A V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA VGE = 15V 1.7 IC = 27A IC = 49A See Fig.2, 5 V IC = 27A , TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 27A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 n A VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 100 15 35 26 18 240 170 0.37 1.81 2.18 25 21 380 310 3.9 7.5 2200 140 29 Max. Units Conditions 150 IC = 27A 23 nC VCC = 400V See Fig. 8 53 VGE = 15V TJ = 25C ns 360 IC = 27A, VCC = 480V 250 VGE = 15V, RG = 10 Energy losses include "tail" mJ See Fig. 10, 11, 13, 14 2.8 TJ = 150C, IC = 27A, VCC = 480V ns VGE = 15V, RG = 10 Energy losses include "tail" mJ See Fig. 13, 14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC40FPBF 60 For both: 50 Triangular wave: I Load Current ( A ) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 28W 40 Square wave: 30 60% of rated voltage I Clamp voltage: 80% of rated 20 10 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 1000 1000 (A) IC , Collector-to-Emitter Current 100 TJ = 25C TJ = 150C IC , Collector-to-Emitter Current (A) 100 TJ = 150C 10 10 TJ = 25C 1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH A 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC40FPBF 50 V GE = 15V 2.5 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 80s PULSE WIDTH 40 IC = 54A 2.0 30 20 I C = 27A 1.5 10 I C = 14A 1.0 -60 -40 -20 0 20 40 60 80 0 25 50 75 100 125 150 A 100 120 140 160 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t2 Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40FPBF 4000 VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc 3000 20 SHORTED VCE = 400V IC = 27A VGE , Gate-to-Emitter Voltage (V) C , Capacitance ( pF) 16 Cies 2000 12 8 1000 Coes Cres 4 0 1 10 A 100 0 0 20 40 60 80 100 A 120 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.60 Total Switchig Losses (mJ) Total Switching Losses (mJ) 2.50 V CC = 480V V GE = 15V T J = 25C I C = 27A 10 IC = 54A I C = 27A 2.40 1 I C = 14A 2.30 2.20 2.10 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 R G = 10 V GE = 15V V CC = 480V A 100 120 140 160 R G , Gate Resistance () TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40FPBF 10 Total Switching Losses (mJ) 8 I C , Collector-to-Emitter Current (A) RG TJ VCC VGE = 10 = 150C = 480V = 15V 1000 VGE = 20V GE TJ = 125C 100 6 SAFE OPERATING AREA 4 10 2 0 0 10 20 30 40 50 A 60 1 1 10 100 1000 IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC40FPBF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4BC40FPBF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB LY L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y LOT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04 8 www.irf.com |
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