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PD -95992
IRF7726PBF
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free
HEXFET(R) Power MOSFET VDSS
-30V
RDS(on) max
0.026@VGS = -10V 0.040@VGS = -4.5V
ID
-7.0A -6.0A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
S
1 8
A D D D D
S
S G
2
7
3
6
4
5
Top View
MICRO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -7.0 -5.7 -28 1.79 1.14 0.01 20 -55 to +150
Units
V A W W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
70
Units
C/W
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02/22/05
IRF7726PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -30 --- --- -1.0 10 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.016 --- --- --- --- --- --- --- --- 46 8.0 8.1 15 25 227 107 2204 341 220
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.026 VGS = -10V, ID = -7.0A 0.040 VGS = -4.5V, ID = -6.0A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -7.0A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 69 ID = -7.0A --- nC VDS = -15V --- VGS = -10V 23 VDD = -15V, VGS = -10V 38 ID = -1.0A ns 341 RG = 6.0 161 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 35 32 -1.8 A -28 -1.2 53 48 V ns C
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.8A, VGS = 0V TJ = 25C, I F = -1.8A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10 sec.
Pulse width 400s; duty cycle 2%.
2
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IRF7726PBF
100
VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
100
VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
-2.5V
0.1
-2.5V
1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
ID = -7.0A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 C
1.0
1
TJ = 25 C
0.5
0.1 2.0
V DS= -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7726PBF
3200 2800
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
16 14 12 10 8 6 4 2 0 0
ID = -7.0A V DS=-24V V DS=-15V
C, Capacitance (pF)
2400 2000 1600 1200 800 400 0 1
Ciss
Coss Crss
10 100
10
20
30
40
50
60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
TJ = 25 C
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
-ID , Drain Current (A) I
TJ = 150 C
100us 10 1ms
1
0.1 0.0
V GS = 0 V
1.5 3.0 4.5 6.0
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7726PBF
8.0
VDS VGS
RD
-ID , Drain Current (A)
6.0
4.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on) tr t d(off) tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 t2
Thermal Response (Z thJA )
PDM
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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+
-
RG
D.U.T. V DD
5
IRF7726PBF
RDS ( on ) , Drain-to-Source On Resistance ) (
( , RDS(on) Drain-to -Source On Resistance)
0.070
0.120
0.060
0.050
0.080
0.040
ID = -7.0A
0.030
VGS = -4.5V 0.040 VGS = -10V
0.020
0.010 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0.000 0 10 20 30 40 50 60 -ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS VG
QGD
VGS
-3mA
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
10 V
D.U.T.
-
VDS
IRF7726PBF
2.4
150
2.1
120
-VGS(th) ( V )
ID = -250A
1.8
Power (W)
150
90
60
1.5
30
1.2 -75 -50 -25 0 25 50 75 100 125
0 0.001 0.010 0.100 1.000 10.000 100.000
TJ , Temperature ( C )
Time (sec)
Fig 15. Typical Vgs(th) Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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IRF7726PBF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+ +
-
* dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17 For P Channel HEXFETS
8
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IRF7726PBF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS D -B3 DDDD 8765 3 E -A1234 SSSG S1 G1 S2 G2 8765 H 0.25 (.010) M A M SINGLE 1234 DUAL 1234 D1 D1 D2 D2 8765
DIM INCHES MIN MAX MILLIMETERS MIN MAX
A A1 B C D e e1 E H L
.036 .004 .010 .005 .116
.044 .008 .014 .007 .120
0.91 0.10 0.25 0.13 2.95
1.11 0.20 0.36 0.18 3.05
.0256 BASIC .0128 BASIC .116 .188 .016 0 .120 .198 .026 6
0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0 3.05 5.03 0.66 6
e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X
RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 )
3.20 ( .126 )
4.24 5.28 ( .167 ) ( .208 )
NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
0.65 6X ( .0256 )
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
DAT E CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPT IONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
WW = (27-52) IF PRECEDED BY A LET TE R YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
24 25 26
X Y Z
50 51 52
X Y Z
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IRF7726PBF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/05
10
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