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| Data Sheet No. 2N5004 Type 2N5004 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV Features: * * * * Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/534 which Semicoa meets in all cases. Generic Part Number: 2N5004 REF: MIL-PRF-19500/534 TO-59 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.3 ms, < 1% duty cycle Power Disipation TA = 25oC ambient Derate above 25oC Reverse Pulse Energy Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC PT Rating 80 100 5.5 5 10 2 11.4 15 Unit V V V A A Watt mW/oC mJ o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N5004 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 mA, IB = 0, pulsed Emitter-Base Cutoff Current VEB = 4 V, IC = 0 VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 VCE = 40 V, IB = 0 VCE = 60 V, VBE = -2.0 V, TC = +150oC Symbol V(BR)CBO IEBO1 IEBO2 ICES1 ICES2 ICEO ICEX Min 80 ------------- Max --1.0 1.0 1.0 1.0 50 500 Unit V A mA A mA A A ON Characteristics Thermal Impedance Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.5 A, VCE = 5 V, pulsed IC = 5.0 A, VCE = 5 V, pulsed IC = 2.55 A, VCE = 5 V pulsed, TC = -55oC Base-Emitter Voltage, Nonsaturted VCE = 5 V, IC = 2.5 V pulsed Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Symbol hFE1 hFE2 hFE3 hFE4 VBE VBE(sat)1 VBE(sat)2 Min 50 70 40 25 ------- Max 3.1 --200 ----1.45 1.45 2.2 Unit o C/W --------- V dc V dc V dc Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 500 mA, f = 10 MHz Common Emitter, Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 1 kHz Open Circuit Output Capacitance VCB = 10 V Symbol |hfe| Min 7.0 Max --- Unit --- hfe COBO 50 --- --250 --pF Switching Time Delay Time IC = 5 A, IB1 = 500 mA Storage Time IB2 = -500 mA Fall Time VBE(off) = 3.7 V Turn-Off Time RL = 6 ohms Symbol tON ts tf tOFF Min --------- Max 0.5 1.4 0.5 1.5 Unit s s s s |
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