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EN27C010
EN27C010 1Megabit EPROM (128K x 8)
FEATURES
* Fast Read Access Time: -45, -55, -70, and -90ns * Single 5V Power Supply * Programming Voltage +12.75V * QuikRiteTM Programming Algorithm * Typical programming time 20s * Low Power CMOS Operation * 1A Standby (Typical) * 30mA Operation (Max.) * CMOS- and TTL-Compatible I/O * High-Reliability CMOS Technology * Latch-Up Immunity to 100mA from -1V to VCC + 1V * Two-Line Control ( OE & CE ) * Standard Product Identification Code * JEDEC Standard Pinout * 32-pin PDIP * 32-pin PLCC * 32-pin TSOP (Type 1) * Commercial and Industrial Temperature Ranges
GENERAL DESCRIPTION
The EN27C010 is a low-power 1-Megabit, 5V-only one-time-programmable (OTP) read-only memory (EPROM). Organized into 128K words with 8 bits per word, it features QuikRiteTM singleaddress location programming, typically at 20s per byte. Any byte can be accessed in less than 45ns, eliminating the need for WAIT states in high-performance microprocessor systems. The EN27C010 has separate Output Enable ( OE ) and Chip Enable ( CE ) controls which eliminate bus contention issues.
FIGURE 1. PDIP
Pin Name A0-A16 DQ0-DQ7 CE OE PGM NC Function Addresses Outputs Chip Enable Output Enable Program Strobe No Connect
VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
PDIP Top View
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC PGM NC A14 A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3
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EN27C010
FIGURE 2. TSOP
TSOP
A11 A9 A8 A13 A14 NC PGM VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
EN27C010
FIGURE 3. PLCC
PLCC Top View
A12 A16 VCC NC A15 VPP PGM 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 A14 A13 A8 A9 A11 OE A10 CE DQ7
DQ2 DQ3 DQ5 DQ1 VSS DQ4 DQ6
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EN27C010
FIGURE 4. BLOCK DIAGRAM
CE PGM OE CONTROL LOGIC
INPUT/ OUTPUT BUFFERS
8 DQ0 - DQ7
8 1024 Y-DECODER A0-A16 ADDRESS INPUTS X-DECODER 1024 Y-SELECT
1M BIT CELL MATRIX
VCC VSS
VPP
FUNCTIONAL DESCRIPTION THE QUIKRITETM PROGRAMMING OF THE EN27C010
When the EN27C010 is delivered, the chip has all 1M bits in the "ONE", or HIGH state. "ZEROs" are loaded into the EN27C010 through the procedure of programming. The programming mode is entered when 12.75 0.25V is applied to the VPP pin, OE is at VIH, and CE and PGM are at VIL. For programming, the data to be programmed is applied with 8 bits in parallel to the data pins. The QUIKRITE programming flowchart in Figure 5 shows Eon's interactive programming algorithm. The interactive algorithm reduces programming time by using 20 s to 100 s programming pulses and giving each address only as many pulses as is necessary in order to reliably program the data. After each pulse is applied to a given address, the data in that address is verified. If the data is not verified, additional pulses are given until it is verified or until the maximum number of pulses is reached. This process is repeated while sequencing through each address of the EN27C010. This part of the programming algorithm is done at VCC = 6.25V to assure that each EPROM bit is programmed to a sufficiently high threshold voltage. This ensures that all bits have sufficient margin. After the final address is completed, the entire EPROM memory is read at VCC = VPP = 5.25 0.25V to verify the entire memory.
TM
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EN27C010
PROGRAM INHIBIT MODE
Programming of multiple EN27C010 in parallel with different data is also easily accomplished by using the Program Inhibit Mode. Except for CE , all like inputs of the parallel EN27C010 may be common. A TTL low-level program pulse applied to an EN27C010 CE input with VPP = 12.75 0.25V, PGM LOW, and OE HIGH will program that EN27C010. A high-level CE input inhibits the other EN27C010 from being programmed.
PROGRAM VERIFY MODE
Verification should be performed on the programmed bits to determining that they were correctly programmed. The verification should be performed with OE and CE at VIL, PGM at VIH, and VPP at it programming voltage.
AUTO PRODUCT IDENTIFICATION
The Auto Product Identification mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25C 5C ambient temperature range that is required when programming the EN27C010. To activate this mode, the programming equipment must force 12.0 V 0.5V on address line A9 of the EN27C010. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH, when A1 = VIH. All other address lines must be held at VIL during Auto Product Identification mode. Byte 0 (A0 = VIL) represents the manufacturer code, and byte 1 (A0 = VIH), the device code. For the EN27C010, these two identifiers bytes are given in the Mode Select Table. All identifiers for manufacturer and device codes will possess odd parity, with the MSB (DQ7) defined as the parity bit. When A1 = V IL, the EN27C010 will read out the binary code of 7F, continuation code, to signify the unavailability of manufacturer ID codes.
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EN27C010
READ MODE
The EN27C010 has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable ( CE ) is the power control and should be used for device selection. Output Enable ( OE ) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE) . Data is available at the outputs (tOE) after the falling edge of OE , assuming the CE has been LOW and addresses have been stable for at least tACC - tOE.
STANDBY MODE
The EN27C010 has CMOS standby mode which reduces the maximum V CC current to 20A. It is placed in CMOS standby when CE is at VCC 0.3 V. The EN27C010 also has a TTLstandby mode which reduces the maximum V CC current to 1.0 mA. It is placed in TTLstandby when CE is at VIH. When in standby mode, the outputs are in a high-impedance state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-line control function is provided to allow for: 1. Low memory power dissipation, 2. Assurance that output bus contention will not occur. It is recommended that CE be decoded and used as the primary device-selection function, while OE be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1F ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and VSS to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM arrays, a 4.7F bulk electrolytic capacitor should be used between VCC and VSS for each eight devices. The location of the capacitor should be close to where the power supply is connected to the array.
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EN27C010
MODE SELECT TABLE
Mode Read Output Disable Standby (TTL) Standby (CMOS) Program
(4)
CE VIL VIL VIH VCC 0.3V VIL VIL VIH
(3)
OE
PGM
VIL VIH X X VIH VIL X VIL VIL
X X X X
(2)
A0 X X X X X X X VIL VIH
A1 X X X X X X X VIH VIH
A9 X X X X X X X VH VH
(1) (1)
VPP VCC VCC VCC VCC VPP VPP VPP VCC VCC
Output DOUT High Z High Z High Z DIN DOUT High Z 1C 01
VIL VIH X X X
Program Verify Program Inhibit Manufacturer Code Device Code
(3)
VIL VIL
NOTES: 1) VH = 12.0V 0.5V 2) X = Either VIH or VIL 3) For Manufacturer Code and Device Code, A1 = V IH When A1 = V IL, both codes will read 7F 4) See DC Programming Characteristics for V PP voltage during programming
EON'S STANDARD PRODUCT IDENTIFICATION CODE
Pins Code Manufacturer Device Type Continuation A0 0 1 0 1 A1 1 1 0 0 DQ7 0 0 0 0 DQ6 0 0 1 1 DQ5 0 0 1 1 DQ4 1 0 1 1 DQ3 1 0 1 1 DQ2 1 0 1 1 DQ1 0 0 1 1 DQ0 0 1 1 1 Hex Data 1C 01 7F 7F
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EN27C010
FIGURE 5. QUIKRITETM PROGRAMMING FLOW CHART
START
ADDRESS = FIRST LOCATION
VCC = 6.25V VPP = 12.75V
X=0
INTERACTIVE SECTION
PROGRAM ONE 20 PULSE 10s
INCREMENT X
YES X = 25? NO FAIL VERIFY BYTE? PASS FAIL INCREMENT ADDRESS NO LAST ADDRESS YES VCC = VPP = 5.25V VERIFY SECTION VERIFY ALL BYTES? PASS DEVICE PASSED
FAIL
DEVICE FAILED
NOTE 1: Either 100s or 20s pulse.
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EN27C010
ABSOLUTE MAXIMUM RATINGS
Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to V SS All pins except A9, V PP, VCC A9, VPP VCC -65aC to +125aC -40aC to +85aC -0.6V to VCC + 0.5V -0.6V to +13.5V -0.6V to +7.0V
OPERATING RANGES
Commercial (C) Case Temperature(Tc) Industrial (I) Case Temperature(Tc) 0aC to +70aC -40aC to +85aC
+4.50V to +5.5V Supply READ Voltages (Functionality is guaranteed between these limits)
Stresses above those shown above may cause permanent damage to the device. This is a stress rating only and operation above these specifications for extended periods may affect device reliability. Operation outside the "OPERATING RANGES" shown above voids any and all warranty provisions.
DC CHARACTERISTICS FOR READ OPERATION
Symbol VOH VOL VIH VIL ILI ILO ICC3 ICC2 ICC1 IPP Parameter Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current VCC Power -Down Current VCC Standby Current VCC Active Current VPP Supply Current Read 2.0 -0.3 -5 -10 Min. 2.4 0.45 VCC +0.5 0.8 5 10 10 1.0 30 100 Max. Unit V V V V A A A mA mA A VIN = 0 to 5.5V VOUT = 0 to 5.5V CE = VCC 0.3V CE = VIH CE = VIL, f=5MHz, IOUT = 0mA CE = OE = VIL, VPP = 5.5V Conditions IOH = -0.4mA IOL = 2.1mA
CAPACITANCE
Symbol CIN COUT CVPP Parameter Input Capacitance Output Capacitance VPP Capacitance Typ. 8 8 18 Max. 12 12 25 Unit pF pF pF Conditions VIN = 0V VOUT = 0V VPP = 0V
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EN27C010
AC CHARACTERISTICS FOR READ OPERATION
-45 Min Max 45 45 25 20 0 0 EN27C010 / EN27C010L -55 -70 Min Max Min Max 55 70 55 25 20 0 70 30 25 0 -90 Min
Symbol tACC (3) tCE (2) tOE (2, 3) tDF (4, 5) tOH
Parameter Address to Output Delay CE to Output Delay OE to Output Delay
Condition CE = OE = VIL OE = VIL OE = VIL
Max 90 90 35 25
Unit ns ns ns ns ns
OE or CE High to Output Float, whichever occurred first Output Hold from Address, CE or OE , whichever occurred first
Note: Please contact Marketing Department for other speed requirements.
FIGURE 6. AC WAVEFORMS FOR READ OPERATION
ADDRESS
ADDRESS VALID
CE tCE tOE OE tACC OUTPUT HIGH Z tDF tOH OUTPUT VALID
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EN27C010
FIGURE 7. OUTPUT TEST WAVEFORMS AND MEASUREMENTS
45 and 55 devices:
3.0V AC DRIVING LEVELS 0.0V tR, tF < 5 ns (10% to 90%) 1.5V AC MEASUREMENT LEVEL
Output Test Load
1.3V (1N914) 3.3K OUTPUT PIN
70 and 90 devices:
2.4V AC DRIVING LEVELS 0.45V tR, tF < 20 ns (10% to 90%) 2.0 0.8 AC MEASUREMENT LEVEL
CL
Note: CL = 100pF including jig capacitance, except for the -45 and -55 devices, where CL = 30pF.
DC PROGRAMMING CHARACTERISTICS
Symbol ILI VIL VIH VOL VOH ICC2 IPP2 VID Parameter Input Load Current Input Low Level Input High Level Output Low Voltage Output High Voltage VCC Supply Current VPP Supply Current A9 Product Identification Voltage CE = PGM = VIL, 11.5 IOL = 2.1 mA IOH = -400 A 2.4 40 10 12.5 Test Conditions VIN = VIL, VIH Min. -0.5 0.7 VCC Limits Max 5.0 0.8 VCC + 0.5 0.45 Units A V V V V mA mA V
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EN27C010
FIGURE 8. PROGRAMMING WAVEFORMS
PROGRAM VIH ADDRESS VIL tAS VIH DATA VIL tDS 6.5V VCC 5.0V tVCS 13.0V VPP 5.0V tPRT VIH CE VIL tCES VIH PGM VIL tPW tOES tVPS tDH DATA IN tOE ADDRESS STABLE
READ (VERIFY)
tAH DATA OUT VALID
tDFP
VIH OE VIL
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EN27C010
SWITCHING PROGRAMMING CHARACTERISTICS (T = + 25 C 5 C)
PARAMETER SYMBOL STANDARD PARAMETER DESCRIPTION
tAS tOES tDS tAH tDH tDFP tVPS tPW
tVCS tCES tOE
Address Setup Time OE Setup Time Data Setup Time Address Hold Time Data Hold Time Output Enable to Output Float Delay VPP Setup Time PGM Program Pulse Width Vcc Setup Time CE Setup Time Data Valid from OE
Min. 2 2 2 0 2 0 2 20 2 2
Max
Units s s s s s
130 105
ns s s s s
150
ns
ORDERING INFORMATION
EN27C010
45
P
I TEMPERATURE RANGE (Blank) = Commercial ( 0aC to +70aC) I = Industrial ( -40aC to +85aC) PACKAGE P = 32 Plastic DIP J = 32 Plastic PLCC T = 32 Plastic TSOP SPEED 45 = 45ns 55 = 55ns 70 = 70ns 90 = 90ns BASE PART NUMBER EN = EON Silicon Devices 27 = EPROM C = CMOS 010 = 128K x 8
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