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| 1.3 CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package ADG859 FEATURES 1.8 V to 5.5 V single supply Tiny 1.65 mm x 1.65 mm package Low on resistance: 1.3 at 5 V supply High current-carrying capability 300 mA continuous current 500 mA peak current at 5 V Rail-to-rail operation Typical power consumption: <0.01 W TTL/CMOS-compatible inputs FUNCTIONAL BLOCK DIAGRAM ADG859 S2 D S1 IN 05258-001 SWITCHES SHOWN FOR A LOGIC 1 INPUT Figure 1. APPLICATIONS Cellular phones PDAs MP3 players Battery-powered systems Audio and video signal routing Modems PCMCIA cards Hard drives Relay replacement GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 maximum over the entire temperature range of -40C to +125C. The ADG859 also has the capability of carrying large amounts of current, typically 300 mA at 5 V operation. These features make the ADG859 an ideal solution for applications that are space-constrained, such as handsets, PDAs, and MP3 players. Each switch conducts equally well in both directions when on. The device exhibits break-before-make switching action, thereby preventing momentary shorting when switching channels. The ADG859 is available in a tiny 6-lead SOT-66 package. PRODUCT HIGHLIGHTS 1. 2. 3. Low on resistance: 2.3 maximum over the full temperature range of -40C to +125C. High current-carrying capability. Tiny 6-lead, 1.65 mm x 1.65 mm SOT-66 package. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 (c) 2005 Analog Devices, Inc. All rights reserved. ADG859 TABLE OF CONTENTS Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 5 ESD Caution.................................................................................. 5 Pin Configuration and Function Descriptions............................. 6 Typical Performance Characteristics ............................................. 7 Test Circuits..................................................................................... 10 Terminology .................................................................................... 12 Outline Dimensions ....................................................................... 13 Ordering Guide .......................................................................... 13 REVISION HISTORY 6/05--Revision 0: Initial Version Rev. 0 | Page 2 of 16 ADG859 SPECIFICATIONS VDD = 5 V 10%, GND = 0 V, unless otherwise noted. 1 Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On Resistance Match Between Channels, RON On Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off) Channel On Leakage, ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 tON tOFF Break-Before-Make Time Delay, tBBM Charge Injection Off Isolation Channel-to-Channel Crosstalk -3 dB Bandwidth Insertion Loss Total Harmonic Distortion (THD + N) CS (Off) CD, CS (On) POWER REQUIREMENTS IDD 25C -40C to +85C -40C to +125C 0 V to VDD 1.3 2.1 0.01 0.093 0.32 0.45 0.02 0.02 2 0.8 0.005 0.1 4 8 10 4.5 6 4 13 -78 -78 125 -0.11 0.062 18 45 0.001 1 2.2 0.163 0.6 2.3 0.163 0.65 Unit V typ max typ max typ max nA typ nA typ V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ dB typ % pF typ pF typ A typ A max Test Conditions/Comments VDD = 4.5 V, VS = 0 V to VDD, IS = -100 mA; Figure 16 VDD = 4.5 V, VS = 4.5V, IS = -100 mA; Figure 16 VDD = 4.5 V, VS = 0 V to VDD, IS = -100 mA; Figure 16 VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Figure 17 VS = VD = 1 V or 4.5 V; Figure 18 VIN = VINL or VINH 11 6.5 12 7 1 RL = 50 , CL = 35 pF VS = 3 V; Figure 19 RL = 50 , CL = 35 pF VS = 3 V; Figure 19 RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V; Figure 20 VS = 0 V, RS = 0 , CL = 1 nF; Figure 21 RL = 50 , CL = 5 pF, f = 100 kHz; Figure 22 RL = 50 , CL = 5 pF, f = 100 kHz; Figure 23 RL = 50 , CL = 5 pF; Figure 24 RL = 50 , CL = 5 pF; Figure 24 RL = 32 , f = 20 Hz to 20 kHz, VS = 3 V p-p; Figure 14 f = 1 MHz f = 1 MHz VDD = 5.5 V Digital inputs = 0 V or 5.5 V 1 2 Temperature range is -40C to +125C. Guaranteed by design; not subject to production test. Rev. 0 | Page 3 of 16 ADG859 VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. 1 Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On Resistance Match Between Channels, RON RON LEAKAGE CURRENTS Source Off Leakage, IS (Off) Channel On Leakage, ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IIN Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 tON tOFF Break-Before-Make Time Delay, tBBM Charge Injection Off Isolation Channel-to-Channel Crosstalk -3 dB Bandwidth Insertion Loss Total Harmonic Distortion (THD + N) CS (Off) CD, CS (On) POWER REQUIREMENTS IDD 1 2 25C -40C to +85C -40C to +125C 0 V to VDD Unit V typ max typ max nA typ nA typ Test Conditions/Comments 3 4.3 0.03 0.11 0.02 0.05 4.5 0.15 4.7 0.15 VDD = 2.7 V, VS = 0 V to VDD, IS = -100 mA; Figure 16 VDD = 2.7 V, VS = 1.2 V, IS = -100 mA; Figure 16 VDD = 3.6 V VS = 3 V/1 V, VD = 1 V/3 V; Figure 17 VS = VD = 1 V or 3 V; Figure 18 2.0 0.8 0.7 0.005 0.1 4 11 15 6 9.5 5 7 -78 -78 125 -0.11 0.1 18 46 0.001 1 0.1 V min V max V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ dB typ % pF typ pF typ A typ A max VDD = 3 V to 3.6 V VDD = 2.7 V VIN = VINL or VINH 16 10 17 11 1 RL = 50 , CL = 35 pF VS = 1.5 V; Figure 19 RL = 50 , CL = 35 pF VS = 1.5 V; Figure 19 RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V; Figure 20 VS = 0 V, RS = 0 , CL = 1 nF; Figure 21 RL = 50 , CL = 5 pF, f = 100 kHz; Figure 22 S1 to S2; RL = 50 , CL = 5 pF, f = 100 kHz; Figure 23 RL = 50 , CL = 5 pF; Figure 24 RL = 50 , CL = 5 pF; Figure 24 RL = 32 , f = 20 Hz to 20 kHz, VS = 2 V p-p; Figure 14 f = 1 MHz f = 1 MHz VDD = 3.6 V Digital inputs = 0 V or 3.6 V Temperature range is -40C to +125C. Guaranteed by design; not subject to production test. Rev. 0 | Page 4 of 16 ADG859 ABSOLUTE MAXIMUM RATINGS TA = 25C, unless otherwise noted. Table 3. Parameter VDD to GND Analog Inputs 1 Digital Inputs1 Peak Current, S or D 5 V Operation 3 V Operation Continuous Current, S or D 5 V Operation 3 V Operation Operating Temperature Range Automotive Storage Temperature Range Junction Temperature SOT-66 Package (4-Layer Board) JA Thermal Impedance Lead-Free Reflow Peak Temperature Time at Peak Temperature 1 Rating -0.3 V to +7.0 V -0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first -0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 500 mA 460 mA 300 mA 275 mA -40C to +85C -65C to +150C 150C 191C/W 260(+0/-5)C 10 sec to 40 sec Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. Table 4. Truth Table Logic (IN) 0 1 Switch 2 (S2) Off On Switch 1 (S1) On Off Overvoltages at S or D are clamped by internal diodes. Current should be limited to the maximum ratings given. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. 0 | Page 5 of 16 ADG859 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN 1 VDD 2 6 S2 Figure 2. 6-Lead SOT-66 Pin Configuration Table 5. Pin Function Descriptions Pin No. 1 2 3 4 5 6 Mnemonic IN VDD GND S1 D S2 Description Logic Control Input. Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. Can be an input or an output. Drain Terminal. Can be an input or an output. Source Terminal. Can be an input or an output. Rev. 0 | Page 6 of 16 05258-002 5D TOP VIEW GND 3 (Not to Scale) 4 S1 ADG859 ADG859 TYPICAL PERFORMANCE CHARACTERISTICS 2.0 1.8 1.6 1.4 1.2 RON () TA = 25C IDS = 100mA VDD = 4.5V VDD = 5V ON RESISTANCE () 3.0 +125C 2.5 +85C 2.0 +25C 1.5 -40C 1.0 0.8 VDD = 5.5V 0.6 0.4 1.0 0 0 1 2 3 VS/VD (V) 4 5 0 0 0.5 1.0 1.5 2.0 2.5 SOURCE VOLTAGE (V) 3.0 Figure 3. On Resistance vs. VS (VD); VDD = 5 V 10% 3.0 VDD = 2.7V 2.5 VDD = 3V TA = 25C IDS = 100mA Figure 6. On Resistance vs. Source Voltage for Different Temperatures, VDD = 3 V 5 VDD = 5V 4 1.5 VDD = 3.6V 1.0 LEAKAGE (nA) 2.0 3 ID, IS (ON) RON () VDD = 3.3V 2 1 0.5 05258-024 0 IS (OFF) 05258-016 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VS/VD (V) -1 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (C) Figure 4. On Resistance vs. VS (VD); VDD = 2.7 V to 3.6 V 1.8 1.6 1.4 +85C +125C Figure 7. Leakage vs. Temperature, VDD = 5 V 4.5 VDD = 3V 4.0 3.5 3.0 LEAKAGE (nA) ON RESISTANCE () 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 SOURCE VOLTAGE (V) 05258-014 ID, IS (ON) 2.5 2.0 1.5 1.0 0.5 0 -0.5 -40 -20 0 20 40 60 80 IS (OFF) 100 120 05258-015 +25C -40C VDD = 5V IDS = 100mA 5.0 TEMPERATURE (C) Figure 5. On Resistance vs. Source Voltage for Different Temperatures, VDD = 5 V Figure 8. Leakage vs. Temperature, VDD = 3 V Rev. 0 | Page 7 of 16 05258-013 0.2 05258-012 0.5 VDD = 3V IDS = 100mA ADG859 30 TA = 25C 25 CHARGE INJECTION (pC) 0 TA = 25C VDD = 3V/5V -20 20 VDD = 5V 15 ATTENUATION (dB) 05258-017 -40 -60 10 VDD = 3V -80 5 -100 05258-020 0 0 0.5 1.0 1.5 2.0 2.5 VD (V) 3.0 3.5 4.0 4.5 5.0 -120 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) Figure 9. Charge Injection vs. Source Voltage Figure 12. Off Isolation vs. Frequency 14 0 TA = 25C VDD = 3V/5V -20 VDD = 3.3V 12 10 ATTENUATION (dB) 05258-018 -40 TIME (ns) 8 6 tON VDD = 5V VDD = 3.3V -60 tOFF 4 VDD = 5V -80 0 -40 -20 0 20 40 60 80 -120 100 1k 10k 100k 1M 10M 100M TEMPERATURE (C) FREQUENCY (Hz) Figure 10. tON/tOFF Times vs. Temperature Figure 13. Crosstalk vs. Frequency 0 0.20 0.18 TA = 25C -2 TA = 25C VDD = 3V/5V -4 THD + N (%) 0.16 0.14 0.12 VDD = 3V, VS = 2V p-p 0.10 0.08 0.06 0.04 VDD = 5V, VS = 3V p-p 05258-022 ON RESPONSE (dB) -6 -8 -10 05258-019 0.02 0 0 5k 10k FREQUENCY (Hz) 15k -12 100 1k 10k 100k 1M 10M 100M 1G 20k FREQUENCY (Hz) Figure 11. Bandwidth Figure 14. Total Harmonic Distortion + Noise Rev. 0 | Page 8 of 16 05258-021 2 -100 ADG859 0 TA = 25C VDD = 3V/5V NO SUPPLY DECOUPLING -20 -40 PSRR (dB) -60 -80 -100 05258-023 -120 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) Figure 15. PSRR Rev. 0 | Page 9 of 16 ADG859 TEST CIRCUITS V IS (OFF) ID (OFF) S D A ID (ON) 05258-003 05258-004 S VS D IDS VS A VD VD Figure 16. On Resistance Figure 17. Off Leakage Figure 18. On Leakage VDD 0.1F VIN VDD VS S2 S1 D RL 50 GND VOUT CL 35pF VIN 50% 50% 50% 50% 90% VOUT 90% IN VIN Figure 19. Switching Times, tON, tOFF VDD 0.1F VDD VS S2 S1 D RL 50 GND VOUT VIN 80% IN VIN CL 35pF VOUT tBBM tBBM 05258-007 Figure 20. Break-Before-Make Time Delay, tBBM VDD 0.1F VIN (NORMALLY CLOSED SWITCH) VDD S2 VS D S1 IN VIN GND CL 1nF 05258-008 ON OFF NC VOUT VIN (NORMALLY OPEN SWITCH) VOUT VOUT QINJ = CL x VOUT Figure 21. Charge Injection Rev. 0 | Page 10 of 16 05258-006 tON tOFF 05258-005 NC S D A ADG859 VDD 0.1F NETWORK ANALYZER 50 VS VOUT 05258-009 VDD S1 NC S2 50 IN D VIN GND RL 50 OFF ISOLATION = 20 LOG VOUT VS Figure 22. Off Isolation VDD 0.1F NETWORK ANALYZER VOUT S1 RL 50 S2 50 VS IN GND VDD D R 50 CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VOUT VS Figure 23. Channel-to-Channel Crosstalk VDD 0.1F NETWORK ANALYZER 50 VS VOUT 05258-011 VDD S1 NC S2 IN D VIN GND RL 50 INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 24. Bandwidth Rev. 0 | Page 11 of 16 05258-010 ADG859 TERMINOLOGY VDD Most positive power supply potential. IDD Positive supply current. GND Ground (0 V) reference. S Source terminal. Can be an input or an output. D Drain terminal. Can be an input or an output. IN Logic control input. VD (VS) Analog voltage on the D and S terminals. RON Ohmic resistance between the D and S terminals. RFLAT (ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured. RON On resistance mismatch between any two channels. IS (Off) Source leakage current with the switch off. ID (Off) Drain leakage current with the switch off. ID, IS (On) Channel leakage current with the switch on. VINL Maximum input voltage for Logic 0. VINH Minimum input voltage for Logic 1. IINL (IINH) Input current of the digital input. CS (Off) Off switch source capacitance. Measured with reference to ground. CD (Off) Off switch drain capacitance. Measured with reference to ground. CD, CS (On) On switch capacitance. Measured with reference to ground. CIN Digital input capacitance. tON Delay time between the 50% and 90% points of the digital input and switch on condition. tOFF Delay time between the 50% and 90% points of the digital input and switch off condition. tBBM On or off time measured between the 80% points of both switches when switching from one to another. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on/off switching. Off Isolation A measure of unwanted signal coupling through an off switch. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. -3 dB Bandwidth The frequency at which the output is attenuated by 3 dB. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. THD + N The ratio of harmonic amplitudes plus noise of a signal to the fundamental. Rev. 0 | Page 12 of 16 ADG859 OUTLINE DIMENSIONS 1.70 1.66 1.50 0.26 0.19 0.11 4 0.20 MIN 6 5 1.30 1.20 1.10 TOP VIEW 1 2 3 1.70 1.65 1.50 0.10 NOM 0.05 MIN BO TTOM VIEW 0.30 0.23 0.10 PIN 1 12 MAX 0.18 0.17 0.13 0.60 0.57 0.53 0.50 BSC 0.25 MAX 0.17 MIN 0.34 MAX 0.27 NOM SEATING PLANE Figure 25. 6-Lead Small Outline Transistor Package [SOT-66] (RY-6-1) Dimensions shown in millimeters ORDERING GUIDE Model ADG859YRYZ-REEL2 ADG859YRYZ-REEL7 2 ADG859BRYZ-REEL2 ADG859BRYZ-REEL72 1 2 Temperature Range -40C to +125C -40C to +125C -40C to +85C -40C to +85C Package Description 6-Lead Small Outline Transistor Package (SOT-66) 6-Lead Small Outline Transistor Package (SOT-66) 6-Lead Small Outline Transistor Package (SOT-66) 6-Lead Small Outline Transistor Package (SOT-66) Package Option RY-6-1 RY-6-1 RY-6-1 RY-6-1 Branding 1 02 02 04 04 Branding on this package is limited to two characters due to space constraints. Z = Pb-free part. Rev. 0 | Page 13 of 16 ADG859 NOTES Rev. 0 | Page 14 of 16 ADG859 NOTES Rev. 0 | Page 15 of 16 ADG859 NOTES (c) 2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D05258-0-6/05(0) Rev. 0 | Page 16 of 16 |
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