View UPA1874GR-9JG_674774.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1874
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1874 is a switching device which can be driven directly by a 2.5-V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* 2.5-V drive available * Low on-state resistance RDS(on)1 = 14.0 m MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 14.5 m MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 16.5 m MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 19.5 m MAX. (VGS = 2.5 V, ID = 4.0 A) * Built-in G-S protection diode against ESD
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27
+0.03 -0.08
0.8 MAX. 0.10 M
0.1
PA1874GR-9JG
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note 1 Note 2
EQUIVALENT CIRCUIT
30 12 8.0 80 2.0 150 V V A A W C C
Gate1 Gate Protection Diode Source1 Drain1 Drain2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Body Diode
Gate2 Gate Protection Diode Source2
Body Diode
Total Power Dissipation (2 unit) Channel Temperature Storage Temperature
-55 to +150
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15631EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan
(c)
2001
PA1874
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 4.0 V ID = 8.0 A IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 50 A/ s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VGS = 4.0 V, ID = 4.0 A VGS = 3.1 V, ID = 4.0 A VGS = 2.5 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 4.0 A VGS = 4.0 V RG = 10 0.5 5.0 9.0 9.5 10.0 11.0 11.0 11.5 12.5 14.5 1280 260 170 70 310 440 410 14 2.0 7.0 0.81 290 310 14.0 14.5 16.5 19.5 1.0 MIN. TYP. MAX. 10 10 1.5 UNIT
A A
V S m m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS
0 10% VGS 90%
IG = 2 mA 50
RL VDD
VDD
PG.
90%
VDS
90% 10% 10%
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G15631EJ1V0DS
PA1874
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA 1000
PW =1 0 s 10 0 s 1m s
dT - Derating Factor - %
100
ID - Drain Current - A
(on )
ID(pulse)
d ite ) Lim .5 V 4 = ID(DC) S
60
10
R
DS
(V
G
40
1
10 ms 10 0m s DC
20
0.1
Single Pulse
0
30 60 90 120 TA - Ambient Temperature - C
150
0.01 PD (FET1) : PD (FET2) = 1 : 1 0.01 0.1 1
10
100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 30 Pulsed
FORWARD TRANSFER CHARACTERISTICS 100 10
ID - Drain Current - A
Pulsed VDS = 10 V
ID - Drain Current - A
25 20 15 10 5 0 VGS = 4.5 V 4.0 V 3.1 V 2.5 V
1 0.1
TA = 125C
25C 75C
0.01 0.001 0.0001
-25C
0
0.1
0.2
0.3
0.4
0.00001 0
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
1.5
VDS = 10 V ID = 1 mA
100 VDS = 10 V Pulsed 10 TA = -25C
25C
75C 1
1.0
125C
0.1
0.5 -50
0
50
100
150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
Data Sheet G15631EJ1V0DS
3
PA1874
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25
VGS = 3.1 V
RDS(on) - Drain to Source On-state Resistance - m
30
VGS = 2.5 V
25 TA = 125C 75C 15 25C -25C 10 5 0.01
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
20 TA = 125C 75C 15 25C -25C 10
20
0.1
1 10 ID - Drain Current - A
100
5 0.01
0.1
1 10 ID - Drain Current - A
100
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25
VGS = 4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20
VGS = 4.5 V
20 TA = 125C 15 75C 25C 10 -25C
TA = 125C 15 75C 25C 10 -25C
5 0.01
0.1
1 10 ID - Drain Current - A
100
5 0.01
0.1
1 10 ID - Drain Current - A
100
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25
ID = 4.0 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50
ID = 4.0 A
20
VGS = 2.5 V 3.1 V 4.0 V
40
30
15
4.5 V
20
10
10
5 -50
0
50
100
150
0 0
2
4
6
8
10
12
Tch - Channel Temperature - C
VGS - Gate to Source Voltage - V
4
Data Sheet G15631EJ1V0DS
PA1874
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 1000 td(off) tf tr 100 td(on)
f = 1 MHz VGS = 0 V
1000
Ciss
100
Coss Crss
10 0.1
1
10
100
10 0.1
VDD = 10 V VGS = 4 V RG = 10
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
ISD - Diode Forward Current - A
DYNAMIC INPUT CHARACTERISTICS 5
VGS - Gate to Source Voltage - V
VGS = 0 V
ID = 8.0 A
4
10
VDD = 24 V 15 V 6V
3
1
2
0.1
1
0.01 0.4
0.6
0.8
1.0
1.2
0
0
5
VSD - Source to Drain Voltage - V
10 15 QG - Gate Charge - nC
20
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(ch-A) - Transient Thermal Resistance - C/W
Single Pulse PD (FET1) : PD (FET2) = 1:1
Mounted on FR-4 board of 25 cm2 x 1.6 mm 125C/W
100
Mounted on Ceramic board of 50 cm2 x 1.1 mm 62.5C/W
10
1
0.1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
Data Sheet G15631EJ1V0DS
5
PA1874
[MEMO]
6
Data Sheet G15631EJ1V0DS
PA1874
[MEMO]
Data Sheet G15631EJ1V0DS
7
PA1874
* The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

▲Up To Search▲

Price & Availability of UPA1874GR-9JG

	To Download UPA1874GR-9JG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .