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STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37 - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmeshTM Power MOSFET General features Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45 <0.45 <0.45 <0.45 ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications Switching application Order codes Part number STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N Marking D11NM60N D11NM60N P11NM60N F11NM60N Package IPAK DPAK TO-220 TO-220FP Packaging Tube Tape & reel Tube Tube November 2006 Rev 2 1/17 www.st.com 17 Contents STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter TO-220/ DPAK/IPAK VDS VGS ID ID IDM (2) PTOT Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature Storage temperature -10 6.3 40 100 0.8 15 2500 -55 to 150 600 25 10(1) 6.3 (1) 40(1) 25 0.2 Unit TO-220FP V V A A A W W/C V/ns V C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 10A, di/dt 400A/s, VDD =80% V(BR)DSS Table 2. Thermal data TO-220 DPAK/IPAK TO-220FP 1.25 62.5 100 300 5 62.5 Unit C/W C/W C Rthj-case Rthj-amb Tl Thermal resistance junction-case Max Thermal resistance junction-amb Max Maximum lead temperature for soldering purpose Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD= 50V) Max value 3.5 200 Unit A mJ 3/17 Electrical characteristics STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) 1. On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 Vdd=400V,Id=5A, Vgs=10V VDS=Max rating, VDS=Max rating,Tc=125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 5A 2 3 0.37 Min. 600 45 1 10 100 Typ. Max. Unit V V/ns A A nA V 4 0.45 Characteristics value at turn off on inductive load Table 5. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent ouput capacitance Gate input resistance Test conditions VDS =15V, ID= 5A ID = 10A Min. Typ. 7.5 850 44 5 130 Max. Unit S pF pF pF pF VDS =50V, f=1MHz, VGS=0 VGS=0, VDS =0V to 480V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain VDD=480V, ID = 5A VGS =10V (see Figure 18) Rg 3.7 nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 31 4.2 15.9 Pulsed: pulse duration = 300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=300V, ID=5A, RG=4.7, VGS=10V (see Figure 17) Min Typ 22 18.5 50 12 Max Unit ns ns ns ns Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, VGS=0 ISD=10A, di/dt =100A/s, VDD=100V, Tj=25C (see Figure 22) VDD=100V di/dt =100A/s, ISD=10A Tj=150C (see Figure 22) 340 3.26 19.2 460 4.42 19.2 Test conditions Min Typ Max 10 40 1.3 Unit A A V ns C A ns C A Pulsed: pulse duration = 300s, duty cycle 1.5% 5/17 Electrical characteristics STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for DPAK / IPAK Figure 6. Thermal impedance for DPAK / IPAK 6/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Figure 7. Output characterisics Figure 8. Electrical characteristics Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/17 Electrical characteristics STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Figure 14. Normalized on resistance vs temperature Figure 13. Normalized gate threshold voltage vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature 8/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Test circuit 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/17 Package mechanical data STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 10/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/17 Package mechanical data STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/17 G STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 13/17 Package mechanical data STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 14/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 15/17 Revision history STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 6 Revision history Table 8. Date 03-Aug-2006 14-Nov-2006 Revision history Revision 1 2 First release Complete version Changes 16/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. 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