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| MICROWAVE CORPORATION HMC323 V00.1100 HBT DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 Features P1dB Output Power: + 16 dBm General Description The HMC323 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. The HMC323 offers 13 dB of gain and +19 dBm of saturated power while only requiring 57 mA from a 8.75V supply. Using a Darlington feedback pair results in reduced sensitivity to normal process variations and provides a good 50-ohm input/output port match. This amplifier is ideal for RF systems where high linearity is required such as 2.2 - 2.7 GHz MMDS. 1 AMPLIFIERS SMT Output IP3: +31 dBm Single Supply: 8.75V Ultra Small SOT26 Package Guaranteed Performance, Parameter -40 to +60 deg C Vs= 8.75V, RBIAS= 22 Ohm Min. Typ. DC - 3.0 10 13 0.015 8 6 16 13 16 28 13 9 20 16 19 31 6 57 16 0.025 Max. Units GHz dB dB/ C dB dB dB dB m dB m dB m dB mA Frequency Range Gain @ 25 C Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) @ 1 GHz Saturated Output Power (Psat) @ 1 GHz Output Third Order Intercept (IP3) @ 1 GHz Noise Figure Supply Current (Icc) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 150 HMC323 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER DC - 3.0 GHz V00.1100 FEBRUARY 2001 Gain & Return Loss 20 15 10 RE S P O NS E (dB ) 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 S1 1 S2 1 S2 2 Gain vs. Temperature 20 18 16 14 GA IN (dB ) 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 C +85 C -40 C 1 AMPLIFIERS + 25 C + 85 C -40 C Input Return Loss vs. Temperature 0 +25 C +85 C Output Return Loss vs. Temperature 0 O UTP U T R ETU R N L OS S (dB ) IN P U T R ETUR N LO S S (dB ) -5 -40 C -5 -10 -10 -15 -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 FR E QUE N C Y (G Hz) FR E QUE N C Y (G Hz) Reverse Isolation vs. Temperature 0 +25 C +85 C -40 C REV E RS E IS O L A TIO N (dB ) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 FR E QUE N C Y (G Hz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 151 SMT FR E QUE N C Y (G Hz) FR E QUE N C Y (G Hz) HMC323 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1100 P1dB vs. Temperature 24 22 +25 C Psat vs. Temperature 24 22 +85 C -40 C +25 C +85 C -40 C 1 P1dB (dB m ) 20 18 16 14 12 10 8 6 4 0 0.5 1 1.5 2 2.5 3 20 18 P sat (dB m ) 16 14 12 10 8 6 4 AMPLIFIERS 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 SMT FR E QUE N C Y (G Hz) FR E QUE N C Y (G Hz) Power Compression @ 1 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -1 8 -1 6 -1 4 -1 2 -1 0 -8 -6 -4 -2 0 P ou t (dBm ), G AIN (d B), P A E (% ) Power Compression @ 2 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -1 8 -1 6 -1 4 -1 2 -1 0 -8 -6 -4 -2 0 P ou t (dBm ), G AIN (d B), P A E (% ) P o ut G ain P AE P o ut G ain P AE 2 4 6 8 2 4 6 8 IN PU T P OW E R (dB m) IN PU T P OW E R (dB m) Output IP3 vs. Temperature 34 32 30 28 IP3 (dB m ) 26 24 22 20 18 16 14 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 C +85 C -40 C FR E QUE N C Y (G Hz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 152 HMC323 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER DC - 3.0 GHz V00.1100 FEBRUARY 2001 Schematic VS (8.75V) Absolute Maximum Ratings DC Voltage on Pin 1 Input Power (RFin)(Vcc = +5V) Channel Temperature (Tc) 8 Volts +20 dBm 175 C 1 AMPLIFIERS SMT Rbias (22 Ohm) Vcc Continuous Pdiss (Ta= 60 C) 507 mW (derate 4.41 mW/ C above 60 C) C BLOCK C BLOCK OUT PIN 1 Storage Temperature Operating Temperature -65 to +150 C -55 to +60 C IN PIN 3 GND PINS 2,4,5,6 Note: 1. Select RBIAS to achieve desired Vcc voltage on Pin 1. 2. External blocking capacitors are required on Pins 1 and 3. Outline 1. 2. 3. MATERIAL: A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC. B) LEADFRAME & PADDLE MATERIAL: COPPER ALLOY PLATING : LEAD & PADDLE- TIN SOLDER PLATE DIMENSIONS ARE IN INCHES (MILLIMETERS). UNLESS OTHERWISE SPECIFIED ALL TOL. ARE 0.005(0.13). 4. 5. 6. CHARACTERS TO HELVETICA MEDIUM, .020 HIGH DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 153 HMC323 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1100 Evaluation PCB for HMC323 1 AMPLIFIERS SMT The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item J1 - J2 U1 PC B* Description PC Mount SMA Connector HMC323 104196 Evaluation PCB 1.5" x 1.5" *Circuit Board Material: Rogers 4350 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 154 HMC323 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER DC - 3.0 GHz V00.1100 FEBRUARY 2001 NOTES: 1 AMPLIFIERS 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 155 SMT |
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