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HZN6.8ZMFA
Silicon Planar Zener Diode for Surge Absorb
REJ03G0032-0100Z (Previous: ADE-208-1456) Rev.1.00 May.08. 2003
Features
* HZN6.8ZMFA has four devices in a monolithic, and can absorb surge. * VSON-5T Package is suitable for high density surface mounting.
Ordering Information
Type No. HZN6.8ZMFA Laser Mark 68( : Let to Month Code) Package Code VSON-5T
Pin Arrangement
1 2
5 4 3 (Top View)
1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
Rev.1.00, May.08.2003, page 1 of 6
HZN6.8ZMFA
Absolute Maximum Ratings
(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd * Tj Tstg
1
Value 150 150 -55 to +150
Unit mW C C
1. Four device total, See Fig.2.
Electrical Characteristics *1
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability * *
2 3
Symbol VZ IR C rd --
Min 6.47 -- -- -- 25
Typ -- -- -- -- --
Max 7.00 0.5 25 30 --
Unit V A pF kV
Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 0.5 A at VR = 3.5 V. 3. Between cathode and anode.
Month Code
Month of Manufacture January February March April May June Month Code A B C D E F Month of Manufacture July August September October November December Month Code G H J K L M
Rev.1.00, May.08.2003, page 2 of 6
HZN6.8ZMFA
Main Characteristic
10-2 250
20h x 15w x 0.8t 0.3
Unit: mm
Zener Current IZ (A)
2.45
10-3
Power Dissipation Pd (mW)
1.0
1.75 1.5
150
With polyimide board
10-4
100
10-5
50
10-6
0
2
4 6 8 Zener Voltage VZ (V)
10
0 0 50 100 150 200 Ambient Temperature Ta (C)
Fig.1 Zener current vs. Zener voltage
Fig.2 Power Dissipation vs. Ambient Temperature
Nonrepetitive Surge Reverses Power PRSM (W)
104 PRSM t 103 Ta = 25C nonrepetitive
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
Fig.3 Surge Reverse Power Ratings
Rev.1.00, May.08.2003, page 3 of 6
3.0 3.8
200
HZN6.8ZMFA
Main Characteristic (cont.)
104
Transient Thermal Impedance Zth (C/W)
103
102
10
1.0
10-2
10-1
1.0 Time t (s)
10
102
103
Fig.4 Transient Thermal Impedance
Rev.1.00, May.08.2003, page 4 of 6
HZN6.8ZMFA
Package Dimensions
1.6 0.05
As of January, 2003
(0.1)
5 - 0.2 -0.05
+0.1
Unit: mm
1.6 0.05
1.2 0.1
0.2
0.2
0.5 1.0 0.1
0.5
0.5 Max
Package Code JEDEC JEITA Mass (reference value)
VSON-5T -- -- 0.002 g
Rev.1.00, May.08.2003, page 5 of 6
0.12 -0.05
+0.1
(0.1)
HZN6.8ZMFA
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Copyright (c) 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.1.00, May.08.2003, page 6 of 6

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