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| AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON5800 is Pbfree (meets ROHS & Sony 259 specifications). AON5800L is a Green Product ordering option. AON5800 and AON5800L are electrically identical. Features VDS (V) = 20V ID = 8 A (VGS = 10V) RDS(ON) < 16 m (VGS = 10V) RDS(ON) < 20 m (VGS = 4.5V) RDS(ON) < 21 m (VGS = 4.0V) RDS(ON) < 22 m (VGS = 3.1V) RDS(ON) < 27 m (VGS = 2.5V) RDS(ON) < 45 m (VGS = 1.8V) ESD Rating: 2000V HBM S2 G2 D S1 G1 Top View Bottom View Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain ID Current RJA=75C/W TA=70C Pulsed Drain Current C IDM TA=25C Power Dissipation A RJA=75C/W TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case B PDSM TJ, TSTG Maximum 20 12 8 6.3 45 1.6 1.0 -55 to 150 Units V A W C Symbol t 10s Steady-State Steady-State RJA RJC Typ 30 61 4.5 Max 40 75 6 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AON5800 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=8A TJ=125C RDS(ON) VGS=4.5V, ID=7A Static Drain-Source On-Resistance VGS=4.0V, ID=6A VGS=3.1V, ID=6A VGS=2.5V, ID=6A VGS=1.8V, ID=4.5A VDS=5V, ID=8A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.5 30 Min 20 1 5 10 0.73 13 18 16 17 18 22 35 28 0.74 1 16 22 20 21 22 27 45 1 2.5 Typ Max Units V A A V V A m m m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC gFS VSD IS 0.5 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1330 182 161 1.5 13.1 2 3.9 6.2 11 40.5 10 18.8 8.1 VGS=4.5V, VDS=10V, ID=8A VGS=5V, VDS=10V, RL=1.25, RGEN=3 IF=8A, dI/dt=100A/s IF=8A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 6: Dec. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON5800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 VGS=2V 10 5 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 50 40 RDS(ON) (m) 30 20 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance VGS=1.8V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8V ID=6A VGS=2.5V ID=4.5A 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 25C 3V 4V ID(A) 6V 2.5V 15 20 VDS=5V 10 125C 0.5 1 VGS=4.5V ID=7A VGS=2.5V VGS=4.5V VGS=10V VGS=10V ID=8A 60 ID=8A 50 40 RDS(ON) (m) IS (A) 30 20 25C 10 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AON5800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=10V ID=8A Capacitance (pF) 2400 Ciss 1800 VGS (Volts) 3 4 1200 2 0.5 Coss 600 Crss 1 1 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 10.0 ID (Amps) 100s 1ms 10ms 100ms 1s 10s 10 100 10s Power (W) 0 0 10 VDS (Volts) Figure 8: Capacitance Characteristics 5 15 200 160 120 80 40 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) TJ(Max)=150C TA=25C 1.0 DC TJ(Max)=150C, TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. |
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