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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-45SL TECHNICAL DATA FEATURES T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level T HIGH POWER P1dB=46.5dBm at 7.1GHz to 7.9GHz T HIGH GAIN G1dB=6.5dB at 7.1GHz to 7.9GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) UNIT dBm dB A dB % dBc A C MIN. 46.0 5.5 -42 TYP. MAX. 46.5 6.5 9.6 36 -45 9.6 10.8 0.8 10.8 100 CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1dB Gain P1dB Compression Point Power Gain at 1dB Gain G1dB VDS= 10V Compression Point f = 7.1 to 7.9GHz Drain Current IDS1 Gain Flatness G add Power Added Efficiency 3rd Order Intermodulation IM3 Two-Tone Test Distortion Po=35.5dBm (Single Carrier Level) Drain Current IDS2 Channel Temperature Rise Tch VDS X IDS X Rth(c-c) Recommended Gate Resistance(Rg) : 28 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -1.0 -5 TYP. 8000 -2.5 24 0.8 MAX. -4.0 1.2 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 11.0A VDS= 3V IDS= 170mA VDS= 3V VGS= 0V IGS= -500A Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2004 TIM7179-45SL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 26 125 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm ? ? Gate @ Source A Drain @ @ A 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.60.3 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. TIM7179-45SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS9.6A Pin=40.0dBm Pout(dBm) 47 46 45 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=7.9GHz VDS=10V 48 IDS9.6A 80 Pout Pout(dBm) 46 70 60 50 44 add 40 30 42 20 10 34 36 38 40 42 44 Pin(dBm) 3 add(%) TIM7179-45SL Power Dissipation(PT) vs. Case Temperature(Tc) 130 110 PT(W) 90 70 50 30 0 40 80 120 160 200 Tc( C ) IM3 vs. Power Characteristics -10 VDS=10V IDS9.6A -20 freq.=7.9GHz f=5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 40 Pout(dBm) @Single carrier level 4 |
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