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| Specification NPN SiGe RF TRANSISTOR SOT223 THN6601B Unit in mm Applications - UHF and VHF wide band amplifier 6.5 3.0 4 Features - High gain bandwidth product fT = 7 GHz - High power gain |S21|2 = 7 dB @ VCE = 5 V, IC = 100 mA, f = 1 GHz - High power POUT = 32 dBm (1.5 W) @ VCE = 6 V, ICQ = 5 mA, f = 465 MHz 1 2.3 0.7 4.6 3.5 7.0 2 3 PIN CONFIGURATION 1. Emitter 2. Base 3. Emitter 4. Collector Absolute Maximum Ratings (TA = 25 ) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 12 3 500 1.5 150 -65 ~ 150 Unit V V V mA W http://www.tachyonics.co.kr July 2005. Page 1 of 7 Rev. 1.0 Specification Thermal Characteristics Symbol Rth j-s Parameter Thermal resistance from junction to soldering point Condition Ptot = 1.5 W; TS = 60 ; note 1 THN6601B Value 55 Unit K/W Note 1. TS is the temperature at the soldering point of the collector pin. Electrical Characteristics (TA = 25 ) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 19 V, IE = 0 mA VCE = 12 V, IB = 0 mA VEB = 1.5 V, IC = 0 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA VCE = 7 V, IC = 100 mA Maximum Available Gain MAG VCE = 5 V, IC = 100 mA, f = 1 GHz VCE = 7 V, IC = 100 mA, f = 1 GHz Insertion Power Gain |S21|2 VCE = 5 V, IC = 100 mA, f = 1 GHz VCE = 7 V, IC = 100 mA, f = 1 GHz Reverse Transfer Capacitance Cre VCB = 6 V, IE = 0 mA, f = 1 MHz 50 4 5 8 9 5 5 6 7.0 11 12 7 7 1.9 Min. Typ. Max. 0.5 10 0.5 300 GHz GHz dB dB dB dB pF Unit hFE Classification Marking hFE Value R1601 50 - 200 R1601* 170 - 300 http://www.tachyonics.co.kr July 2005. Page 2 of 7 Rev. 1.0 Specification Typical Characteristics ( TA = 25, unless otherwise specified) Power Dissipation vs. Ambient Temperature Reverse Transfer Capacitance, Cre (pF) 2.0 4.0 3.5 3.0 THN6601B Reverse Transfer Capacitance vs. Collector to Base Voltage Collector Power Dissipation, Ptot (W) 1.5 1.0 2.5 2.0 1.5 1.0 0 2 4 6 8 10 0.5 0.0 0 25 50 75 100 o 125 150 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 160 140 DC Current Gain, hFE 120 100 80 60 40 V CE = 5 V Collector Current vs. Base to Emitter Voltage 30 Collector Current, IC (mA) VCE = 5 V 25 20 15 10 5 20 0 -3 10 10 -2 10 -1 10 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector Current, IC (A) Base to Emitter Voltage, VBE (V) http://www.tachyonics.co.kr July 2005. Page 3 of 7 Rev. 1.0 Specification THN6601B Collector Current vs. Collector to Emitter Voltage 0.7 0.6 Collector Current, IC (A) 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 I B step = 1.8 m A Gain Bandwidth Product vs. Collector Current 10 VCE = 5 V VCE = 7 V 8 Gain Bandwidth Product, fT (GHz) 6 4 2 0 10 100 1000 Collector to Em itter Voltage, V CE (V) Collector Current, IC (mA) Insertion Power Gain vs. Collector Current 12 20 Maximum Available Gain vs. Collector Current Maximum Available Gain, MAG (dB) Insertion Power Gain, |S21| (dB) 10 8 6 4 2 0 10 VCE = 5 V VCE = 7 V f = 1 GHz 18 16 14 12 10 8 6 4 2 0 10 VCE = 5 V VCE = 7 V f = 1 GHz 2 100 1000 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) http://www.tachyonics.co.kr July 2005. Page 4 of 7 Rev. 1.0 Specification Application Information RF performance at TS 60 in common emitter configuration Operation Mode CW, class-AB f (MHz) 465 VCE (V) 6 POUT (dBm) 30 THN6601B GP (dB) 11 C (%) 56 Output Power or Power Gain vs. Input Power 40 35 Output Power, POUT (dBm) 30 25 20 15 10 5 0 0 5 10 15 20 25 POUT 8 6 4 2 0 30 GP f = 465 MHz, VCE = 6 V, ICQ = 5 mA Power Gain or Collector Efficiency vs. Output Power 18 16 14 Power Gain, GP (dB) 20 18 16 Power Gain, GP (dB) 14 12 10 8 6 4 2 0 10 15 20 25 30 C f = 465 MHz, VCE = 6 V, ICQ = 4 mA 100 90 80 70 60 50 40 30 20 10 0 35 Collector Efficiency, C (%) GP 12 10 Input Power, PIN (dBm) Output Power, POUT (dBm) http://www.tachyonics.co.kr July 2005. Page 5 of 7 Rev. 1.0 Specification Evaluation Board (for FRS at 465 MHz) : Air Coil C5 C6 C7 C11 C4 L2 L1 C2 L4 C8 L3 L5 C12 C3 C9 C10 L6 THN6601B Part C1, C4, C5, C9 C2 C3 C6 C7 C8 C10, C12 C11 L1 L2 L3, L5, L6 L4 Value 100 pF 12 pF 22 pF 1 nF 1 uF 7 pF 3 pF 5 pF 6.8 nH 100 nH 30 nH 8.2 nH C1 FR4 glass epoxy; dielectric constant = 4.5, thickness = 0.8 mm Evaluation board dimension = 45 30 mm2 Test Circuit Schematic Diagram VBB 100 nF 30 nH 30 nH 8.2 nH 100 pF INPUT 100 pF 12 pF 6.8 nH 22 pF 7 pF 30 nH 3 pF 100 pF 1 nF VCC 1 uF 30 nH 5 pF OUTPUT 3 pF http://www.tachyonics.co.kr July 2005. Page 6 of 7 Rev. 1.0 Specification Package Dimensions Unit : mm 0.95 0.85 THN6601B S seating plane 6.7 6.3 0.32 0.24 3.1 2.9 4 16 max 16 10 max 1.8 max 1 2.3 4.6 2 0.8 0.6 3 July 2005. 3.7 3.3 7.3 6.7 0.10 0.01 http://www.tachyonics.co.kr Page 7 of 7 Rev. 1.0 |
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