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S amHop Microelectronics C orp.
P -C hannel E Sh nhancement Mode MOS FE T
et e
4U
om .c
S T U/D1030P L
P reliminary May.28 2004
ta a P R ODUC T S UMMAR Y D . R Vw w ID w
DS S
F E AT UR E S
DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON).
-30V
-18A
55 @ V G S = -10V 85 @ V G S = -4.5V
R ugged and reliable.
TO-252 and TO-251 P ackage.
D G S
G D
S
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
w
w
w
.D
t a
S a
e h
VDS VGS ID IDM IS PD
t e
G
U 4
D S
.c
m o
S ymbol
Limit 30 20 18 45 20 50 -55 to 175
Unit V V A A A
TJ, TS TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
w
w
w
.D
at 3
Sh a
et e
W U 4
.
om c
C
C /W C /W
50
S T U/D1030P L
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS
c
Condition
VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS = -10V, ID =-5.3A VGS = -4.5V, ID = -4.2A VDS = -5V, VGS = -10V VDS = -15V, ID = - 5.3A
Min Typ C Max Unit
-30 -1 100 -1 -1.8 -2.5 45 70 -15 7 612 129 96 55 V uA nA V
m-ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
85 m-ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
CISS COSS CRSS
c
VDS =-15V, VGS = 0V f =1.0MHZ
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
2
VD = -15V ID = -1A VGEN = - 10V R GE N = 6 ohm R L = 15 ohm VDS =-15V,ID =-5.3A,VGS =-10V VDS =-15V,ID =-5.3A,VGS =-4.5V VDS =-15V, ID = -5.3A VGS =-10V
12.6 17.4 45.4 37 13 6.8 2.7 2.6
ns ns ns ns nC nC nC nC
S T U/D1030P L
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is =-10A
Min Typ Max Unit
-1 -1.3 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
20 -V G S =3V 25 25 C 20
-V G S =10,9,8,7,6,5,4V
-ID, Drain C urrent(A)
12
-V G S =2V
-ID, Drain C urrent (A)
16
-55 C
15 T j=125 C 10
8 4 0 -V G S =1V
5 0 0.0
0
2
4
6
8
10
12
0.5
1
1.5
2
2.5
3
-V DS , Drain-to-S ource Voltage (V )
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R DS (ON), On-R es is tance(Ohms )
2.2 1.8 1.4 1.0 0.6 0.2 0
F igure 2. Trans fer C haracteris tics
V G S =-10V ID=-5.3A
1000
C , C apacitance (pF )
800 600 400 200 0 C rs s 0 5 10 15 20 25 30 C is s
C os s
-50
-25
0
25
50
75
100 125 T j( C )
-V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Temperature
3
S T U/D1030P L
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=-250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
12
F igure 6. B reakdown V oltage V ariation with T emperature
20
gFS , T rans conductance (S )
8 6 4 2 0 V DS =-15V 0 5 10 15 20 25
-Is , S ource-drain current (A)
10
10
1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
-V G S , G ate to S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
50
-ID, Drain C urrent (A)
it
10 8 6 4 2 0 0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
VDS =-15V ID=-5.3A
10
R
(O DS
N)
L im
10
10
0m s
ms
1
DC
1s
0.1 0.03
VGS =-10V S ingle P ulse T c=25 C 1 10 30 50
0.1
-V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe O perating Area
4
S T U/D1030P L
V DD ton V IN D VG S R GE N G
90%
toff tr
90%
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
6
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective T ransient T hermal Impedance
1 D=0.5
0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10
-5
P DM t1 1. 2. 3. 4. 10
-3
t2
R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10
10
-4
10
-2
10
-1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
S T U/D1030P L
6
S T U/D1030P L
5 95 7 84 9 6.00
35 05 85 0.94 4 3 0
9 7 30 3 9 36
3 41 3 3 5 1
4
L2
2.29 9.70 1.425 0.650 0.600
BSC 1 1.625 0.850 REF.
0.090 82 56 6 0.024
BSC 398 0.064 33 REF.
6
S T U/D1030P L
TO-251 Tube
TO251 Tube/TO-252 Tape and Reel Data
" A"
TO-252 Carrier Tape
UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1
r1.5 + 0.1 -0
E 16.0 0.3O
E1 1.75 0.1O
E2 7.5 O0.15
P0 8.0 O0.1
P1 4.0 O0.1
P2 2.0 O0.15
T 0.3 O0.05
TO-252 Reel
S
UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W
17.0 + 1.5 -0
T 2.2
H
r13.0 + 0.5 - 0.2
K 10.6
S 2.0 O0.5
G
R
V
8

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