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| Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1390 REPETITIVE AVALANCHE AND dv/dt RATED IRH7450SE N-CHANNEL HEXFET(R) TRANSISTOR 500 Volt, 0.51, (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the (SEE) process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary Part Number IRH7450SE BVDSS 500V RDS(on) 0.51 ID 11A Features: n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25C Continuous Drain Current ID @ VGS = 12V, TC = 100C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction TSTG Storage Temperature Range Lead Temperature Weight Pre-Radiation IRH7450SE 11 7.0 44 150 1.2 20 500 11 15 3.5 -55 to 150 Units A W W/K V mJ A mJ V/ns oC 300 (0.0063 in. (1.6mm) from case for 10 sec.) 11.5 (typical) g To Order Previous Datasheet IRH7450SE Device Index Next Data Sheet Pre-Radiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min. 500 -- -- -- 2.5 3 -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units -- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 -- -- 0.51 0.57 4.5 -- 50 250 100 -100 180 45 105 45 190 190 130 -- V V/C V S( ) A nA nC Test Conditions VGS = 0V, ID = 1.0 mA Reference to 25C, ID = 1.0 mA VGS = 12V, ID =7.0A VGS = 12V, ID = 11A VDS = VGS, ID = 1.0 mA VDS > 15V, I DS = 7.0A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 11A VDS = Max. Rating x 0.5 VDD = 250V, ID =11A, RG = 2.35 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ns LS Internal Source Inductance -- 8.7 -- nH Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 4000 330 52 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0 MHz Source-Drain Diode Ratings and Characteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- -- -- 11 44 Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. A VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Tj = 25C, IS = 11A, VGS = 0V Tj = 25C, IF =11 A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. -- -- -- -- -- -- 1.6 1100 16 V ns C Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min. Typ. Max. Units -- -- -- -- 0.83 -- 30 0.12 -- K/W Test Conditions Typical Socket Mount To Order Previous Datasheet IRH7450SE Device Index Next Data Sheet Radiation Characteristics Radiation Performance of Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. Table 1. Low Dose Rate Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD IRH7450SE 100K Rads (Si) Units max. -- 4.5 100 -100 50 0.51 1.6 V nA A V Test Conditions VGS = 0V, ID = 1.0 mA VGS = VDS , ID = 1.0 mA VGS = 20V VGS = -20V VDS = 0.8 x Max Rating, VGS = 0V VGS = 12V, ID =7A TC = 25C, IS = 11A,VGS = 0V min. Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage 500 2.5 -- -- -- -- -- Table 2. High Dose Rate Parameter VDSS IPP di/dt L1 1011 Rads (Si)/sec 1012 Rads (Si)/sec Drain-to-Source Voltage Min. Typ Max. Min. Typ. Max. Units Test Conditions -- -- 400 -- -- 400 V Applied drain-to-source voltage during gamma-dot -- 8 -- -- 8 -- A Peak radiation induced photo-current -- -- 15 -- -- 3 A/sec Rate of rise of photo-current 27 -- -- 133 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Parameter BV DSS Typ. 500 Units V Ion Ni LET (Si) (MeV/mg/cm2) 28 Fluence (ions/cm2) 1 x 105 Range (m) ~35 VDS Bias (V) 400 VGS Bias (V) -5 To Order Previous Datasheet IRH7450SE Device Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 50V, Starting T J = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 11A, VGS = 12V, 25 RG 200 ISD 11A, di/dt 130 A/s, VDD BV DSS, T J 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C Index Next Data Sheet Radiation Characteristics Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions -- TO-204AA (Modified TO-3) DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/96 To Order |
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