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| Datasheet File OCR Text: |
| PROCESS Ultra Fast Rectifier CPD16 Central TM 1.0 Amp Glass Passivated Rectifier Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 50 x 50 MILS 12.2 MILS 34 x 34 MILS Au - 5,000A Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES UES1001 thru UES1003 UF4001 thru UF4007 CMR1U-01 Series CMR1U-01M Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (19-September 2003) Central TM PROCESS CPD16 Semiconductor Corp. Typical Electrical Characteristics 100000 10000 1000 100 10 1 0.1 0 200 400 600 800 1000 T A = 25C T A = 125C T A = 75C 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (19-September 2003) |
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