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APTM20AM08FT
Phase leg MOSFET Power Module
VBUS Q1 NTC2
VDSS = 200V RDSon = 8mW max @ Tj = 25C ID = 208A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G1
S1
OUT Q2
G2
S2 0/VBU S NTC1
G2 S2
OUT
VBUS
0/VBUS
OUT
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 208 155 832 30 8 781 100 50 3000 Unit V A V mW W A mJ
May, 2004 1-6 APTM20AM08FT - Rev 1
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTM20AM08FT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Min 200 Tj = 25C Tj = 125C 3
Typ
Max 375 1500 8 5 150
Unit V A mW V nA
VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 208A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 208A RG = 2.5W Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5 Min Typ 14.4 4.66 0.29 280 106 134 32 64 88 116 1698 1858 1872 1972 J J ns Max Unit nF
nC
Source - Drain diode ratings and characteristics
Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 208A IS = - 208A VR = 133V diS/dt = 200A/s IS = - 208A VR = 133V diS/dt = 200A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 1.8 6.8 Min Typ Max 208 155 1.3 5 230 450 Unit A V V/ns ns C
APT website - http://www.advancedpower.com
2-6
APTM20AM08FT - Rev 1
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150C IS - 208A di/dt 700A/s
May, 2004
APTM20AM08FT
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.16 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e R 25
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
3-6
APTM20AM08FT - Rev 1
May, 2004
APTM20AM08FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=15V
700 600 ID, Drain Current (A) 500 400 300 200 100 0
Transfert Characteristics 600 ID, Drain Current (A) 500 400 300 200 100 0
TJ=25C TJ=125C TJ=-55C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to VGS=10V @ 104A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 250 200 150 100 50 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 50 100 150 200 250 300 ID, Drain Current (A)
25
50
75
100
125
150
May, 2004 4-6 APTM20AM08FT - Rev 1
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM20AM08FT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
limited by RDSon
VGS=10V ID= 104A
1000
100s 100 1ms 10 Single pulse TJ=150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms 100ms
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 ID=208A VDS=40V 12 TJ=25C 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
May, 2004
VDS=100V
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM20AM08FT - Rev 1
APTM20AM08FT
Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 250 300 350 ID, Drain Current (A)
VDS=133V RG=2.5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=2.5 TJ=125C L=100H
td(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
td(on)
tr
50
100 150 200 250 300 350 ID, Drain Current (A)
Switching Energy vs Current 4 Switching Energy (mJ) 3 2 1 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V D=50% RG=2.5 TJ=125C VDS=133V RG=2.5 TJ=125C L=100H
Switching Energy vs Gate Resistance 6
VDS=133V ID=208A TJ=125C L=100H
Eoff
5 4 3 2 1 0
Eon and Eoff (mJ)
Eoff
Eon
Eon
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150C 100 TJ=25C 10
300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 175 200 ID, Drain Current (A)
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
May, 2004
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM20AM08FT - Rev 1

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