View APT6015LVFR_644489.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT6015LVFR
600V 38A 0.150W
POWER MOS V (R)
FREDFET
TO-264
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
* Fast Recovery Body Diode * Lower Leakage * Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* 100% Avalanche Tested * Popular TO-264 Package
G
D
S
All Ratings: TC = 25C unless otherwise specified.
APT6015LVFR UNIT Volts Amps
Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions
Y R A IN IM L E R P
600 38 152 30 40 520 4.16 300 38 50 -55 to 150
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/C C Amps mJ
2500
MIN
TYP
MAX
UNIT Volts Amps
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
600 38 0.150 250 1000 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5945 Rev- 1-2000
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT6015LVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX UNIT pF
7500 900 320 315 45 125 15 13 45 5
9000 1260 480 475 70 190 30 26 70 10
ns nC
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Pulsed Source Current
1
Continuous Source Current (Body Diode) (Body Diode)
5
Diode Forward Voltage Peak Diode Recovery
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction to Case
Y R A IN IM L E R P
2
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
38
152 1.3 5
(VGS = 0V, IS = -ID [Cont.])
dv/
dt
Tj = 25C Tj = 25C Tj = 25C
250 500
Tj = 125C Tj = 125C Tj = 125C
1.6 5.5 15 27
C
Amps
MIN
TYP
MAX
UNIT C/W
0.24 40
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.46mH, R = 25W, Peak I = 38A j G L 5 I I [Cont.], di/ = 100A/s, T 150C, R = 2.0W, V = 200V. S D j G R dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.005 0.01 SINGLE PULSE
PDM
0.01
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5945 Rev- 1-2000
Z
qJC
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT6015LVFR
100
ID, DRAIN CURRENT (AMPERES)
VGS=6V, 7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
100 5.5V VGS=6V, 7V, 10V & 15V
80
80
5.5V
60
5V
60
5V
40 4.5V 20 4V 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 0
40 4.5V 20 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TJ = -55C TJ = +25C TJ = +125C
1.6
V
GS
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
80
60
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
40
20
TJ = +125C TJ = +25C
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 40
ID, DRAIN CURRENT (AMPERES)
0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
30
20
Y R A IN IM L E R P
1.4 VGS=10V 1.2 VGS=20V 1.0 TJ = -55C 0.8 0 1.15 1.10 1.05 1.00 0.95 0.90 -50 1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
D
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
10
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
I = 0.5 I [Cont.]
D
V
GS
= 10V
2.0
1.1 1.0
1.5
0.9 0.8 0.7
050-5945 Rev- 1-2000
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT6015LFVR
200
ID, DRAIN CURRENT (AMPERES)
100 50
OPERATION HERE LIMITED BY RDS (ON)
10S 100S
30,000
10,000
C, CAPACITANCE (pF)
Ciss
1mS 10 5 10mS 100mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE DC
5,000 Coss 1,000 500 Crss
.1
1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
200 100 TJ =+150C TJ =+25C 50
16
VDS=120V VDS=300V
12
8
4
100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
Y R A IN IM L E R P
VDS=480V 10 5 1
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079)
19.51 (.768) 20.50 (.807)
3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
050-5945 Rev- 1-2000
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

▲Up To Search▲

Price & Availability of APT6015LVFR

	To Download APT6015LVFR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .