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APM9424
N-Channel Enhancement Mode MOSFET
Features
* * * *
20V/10A, RDS(ON) = 10m(typ.) @ VGS = 4.5V RDS(ON) = 15m(typ.) @ VGS = 2.5V Super High Density Cell Design Reliable and Rugged SO-8 Package
Pin Description
S S S G
1 2 3 4
8 7 6 5
D D D D
SO - 8
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
G
DD DD
S
SS
Ordering and Marking Information
APM 9424
H a n d lin g C o d e Tem p. R ange P ackage C ode
N-Channel MOSFET
P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & Reel
APM 9424 K :
APM 9424 XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating 20 16 TA = 25C 10 30 Unit V A
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 1 www.anpec.com.tw
APM9424
Absolute Maximum Ratings (Cont.)
Symbol PD TJ TSTG RJA* Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA = 25C TA = 100C
(TA = 25C unless otherwise noted)
Rating 2.5 1.0 150 -55 to 150 50 Unit W C C/W
* Surface Mounted on FR4 Board, t 10 sec.
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Parameter
(TA=25C unless otherwise noted)
Test Condition
APM9424 Typ. Max. Min.
Unit
VGS=0V , IDS=250A VDS=16V , VGS=0V VDS=VGS , IDS=250A VGS=16V , VDS=0V VGS=4.5V , IDS=10A VGS=2.5V , IDS=8A ISD=2.3A , VGS=0V
20 1 0.7 0.9 10 15 0.8 28.2 5.2 7.6 35 80 115 40 2400 720 480 1.5 100 13 20 1.3 37
V A V nA m V
Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer
VDS=10V , VGS=4.5V , IDS=10A
nC 70 160 235 85
VDD=15V , IDS=10A , VGEN=4.5V , RG=6
ns
VGS=0V , VDS=15V Frequency=1.0MHz
pF
Notes
a b
: Guaranteed by design, not subject to production testing : Pulse test ; pulse width 500s, duty cycle 2%
Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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APM9424
Typical Characteristics
Output Characteristics
30 25
VGS=2.5,3,4,5,6,7,8,9,10V
Transfer Characteristics
30 25
ID-Drain Current (A)
ID-Drain Current (A)
20 15
VGS=2V
20 15 10 5
TJ=125C TJ=25C TJ=-55C
10 5
VGS=1.5V
0
0
2
4
6
8
10
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
IDS=250A
On-Resistance vs. Drain Current
0.030
VGS(th)-Threshold Voltage (V)
RDS(on)-On-Resistance ()
1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50
0.025 0.020
VGS=2.5V
0.015
VGS=4.5V
0.010 0.005 0.000
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
Tj - Junction Temperature (C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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APM9424
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.05
ID=10A
On-Resistance vs. Junction Temperature
1.8
VGS=4.5V IDS=10A
RDS(on)-On-Resistance ()
0.04
RDS(on)-On-Resistance () (Normalized)
1.6 1.4 1.2 1.0 0.8 0.6
0.03
0.02
0.01
0.00
0
2
4
6
8
10
0.4 -50
-25
0
25
50
75
100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
5
VDS=10V IDS=10A
Capacitance
4000
Frequency=1MHz
VGS-Gate-Source Voltage (V)
4
3200
Capacitance (pF)
Ciss
3
2400
2
1600
Coss
1
800
Crss
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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APM9424
Typical Characteristics
Source-Drain Diode Forward Voltage
30 10 80
Single Pulse Power
IS-Source Current ()
60 1
Power (W)
0.1
TJ=150C
TJ=25C
40
0.01
20
1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0.01
0.1
1
10
100
VSD-Source-to-Drain Voltage (V )
Time (sec)
Normalized Thermal Transient Impedance, Junction to Ambient
2
Normalized Effective Transient Thermal Impedance
1
Duty Cycle = 0.5
D= 0.2 D= 0.1
0.1
D= 0.05
D= 0.02
SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted
0.01 1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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APM9424
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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APM9424
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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APM9424
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
E Po P P1 D
t
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 330 1
B 62 +1.5 D
C 12.75+ 0.15 D1
J 2 0.5 Po
T1 12.4 0.2 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1
W 12 0. 3 Bo 5.2 0. 1
P 8 0.1 Ko
E 1.750.1 t
SOP- 8
F 5.5 1
1.55 +0.1 1.55+ 0.25 4.0 0.1
2.1 0.1 0.30.013
Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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APM9424
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003
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