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| AAT8107 20V P-Channel Power MOSFET General Description The AAT8107 low threshold 20V, P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT8107 is designed for use as a load switch in battery-powered applications and protection in battery packs. Features * * * TrenchDMOSTM VDS(MAX) = -20V ID(MAX)1 = -6.5A @ 25C Low RDS(ON): * 35m @ VGS = -4.5V * 60m @ VGS = -2.5V Applications * * Battery Packs Battery-Powered Portable Equipment SOP-8L Package Top View D 8 D 7 D 6 D 5 Absolute Maximum Ratings TA = 25C, unless otherwise noted. Symbol VDS VGS ID IDM IS PD TJ, TSTG 1 S 2 S 3 S 4 G Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Maximum Power Dissipation1 Operating Junction and Storage Temperature Range TA = 25C TA = 70C TA = 25C TA = 70C Value -20 12 6.5 5.2 32 -1.7 2.5 1.6 -55 to 150 Units V A W C Thermal Characteristics Symbol RJA RJA2 RJF Description Typical Junction-to-Ambient Steady State Maximum Junction-to-Ambient t<10 Seconds1 Typical Junction-to-Foot1 1 Value 80 50 27 Units C/W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300s. 8107.2005.05.1.1 1 AAT8107 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25C, unless otherwise noted. Symbol Description DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS Drain-Source On-Resistance1 Conditions VGS = 0V, ID = -250A VGS = -4.5V, ID = -6.5A VGS = -2.5V, ID = -5.0A VGS = -4.5V, VDS = 5V (Pulsed) VGS = VDS, ID = -250A VGS = 12V, VDS = 0V VGS = 0V, VDS = -20V VGS = 0V, VDS = -16V, TJ = 70C VDS = -5V, ID = -6.5A VDS = -15V, RD = 2.3, VGS = -4.5V VDS = -15V, RD = 2.3, VGS = -4.5V VDS = -15V, RD = 2.3, VGS = -4.5V VDS = -15V, RD = 2.3, VGS = -4.5V, RG = 6 VDS = -15V, RD = 2.3, VGS = -4.5V, RG = 6 VDS = -15V, RD = 2.3, VGS = -4.5V, RG = 6 VDS = -15V, RD = 2.3, VGS = -4.5V, RG = 6 VGS = 0, IS = -6.5A Min -20 Typ Max Units V 27 46 -32 -0.6 35 60 m A V nA A S On-State Drain Current1 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage IDSS Current gfs Forward Transconductance1 Dynamic Characteristics2 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-On Delay tR Turn-On Rise Time tD(OFF) Turn-Off Delay tF Turn-Off Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage1 IS Continuous Diode Current3 100 -1 -5 12 13.6 2.3 5.5 10 35 38 50 -1.5 -1.7 nC ns V A 1. Pulse test: Pulse Width = 300s. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 8107.2005.05.1.1 AAT8107 20V P-Channel Power MOSFET Typical Characteristics TJ = 25C, unless otherwise noted. Output Characteristics 32 Transfer Characteristics 32 5V 4.5V 24 4V 3.5V VD = VG 24 25C -55C 125C 3V IDS (A) ID (A) 2V 8 16 16 2.5V 8 1.5V 0 0 1 2 3 4 0 0 1 2 3 4 5 VDS (V) VGS (V) On-Resistance vs. Drain Current 60 50 40 30 20 10 0 0 2 4 6 8 10 12 120 On-Resistance vs. Gate-to-Source Voltage ID = 6.5A VGS = 2.5V RDS(ON) (m) 100 80 60 40 20 0 0 1 2 3 4 5 RDS(ON) (m) VGS = 4.5V ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.4 0.5 Threshold Voltage ID = 250A Normalized RDS(ON) VGS(th) Variance (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VGS = 4.5V ID = 6.5A 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (C) TJ (C) 8107.2005.05.1.1 3 AAT8107 20V P-Channel Power MOSFET Typical Characteristics TJ = 25C, unless otherwise noted. Gate Charge 5 4 3 Source-Drain Diode Forward Voltage 100 VD = 15V ID = 6.5A 10 TJ = 150C VGS (V) IS (A) 2 1 0 0 3 6 9 12 15 TJ = 25C 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 QG, Charge (nC) VSD (V) Capacitance 2000 50 40 Single Pulse Power, Junction to Ambient Capacitance (pF) 1600 Power (W) 1200 Ciss 30 20 800 Coss 400 10 Crss 0 0 5 10 15 20 0 0.001 0.01 0.1 1 10 100 VDS (V) Time (s) Transient Thermal Response, Junction to Ambient 1 0.5 0.2 0.1 Normalized Effective Transient Thermal Impedance 0.1 0.05 0.02 0.01 1E-04 Single Pulse 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 Time (s) 4 8107.2005.05.1.1 AAT8107 20V P-Channel Power MOSFET Ordering Information Package SOP-8 Marking 8107 Part Number (Tape and Reel)1 AAT8107IAS-T1 Package Information SOP-8 3.90 0.10 4.90 0.10 6.00 0.20 0.375 0.125 1.55 0.20 45 0.175 0.075 4 4 0.235 0.045 0.825 0.445 0.42 0.09 x 8 1.27 BSC All dimensions in millimeters. 1. Sample stock is generally held on all part numbers listed in BOLD. 8107.2005.05.1.1 5 AAT8107 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8107.2005.05.1.1 |
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