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2N5401
2N5401
Amplifier Transistor
* Collector-Emitter Voltage: VCEO= 150V * Collector Dissipation: PC (max)=625mW * Suffix "-C" means Conter Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Value -160 -150 -5 -600 625 150 -55 ~ 150 Units V V V mA mW C C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100A, IE=0 IC= -1mA, IB=0 IE= -10A, IC=0 VCB= -120V, IE=0 VEB= -3V, IC=0 IC= -1mA, VCE= -5V IC= -10mA, VCE= -5V IC= -50mA, VCE= -5V IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, VCE= -10V, f=100MHz VCB= -10V, IE=0, f=1MHz IC= -250A, VCE= -5V RS=1K f=10Hz to 15.7KHz 100 30 60 50 Min. -160 -150 -5 -50 -50 240 -0.2 -0.5 -1 -1 400 6 8 V V V V MHz pF dB Typ. Max. Units V V V nA nA
VCE (sat) VBE (sat) fT Cob NF
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure
* Pulse Test: Pulse Width300s, Duty Cycle2%
(c)2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
2N5401
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
VCE = -5V
IC = 10 IB
hFE, DC CURRENT GAIN
VBE(sat)
-1
100
VCE(sat)
-0.1
10 -1
-10
-100
-1000
-0.01 -1 -10 -100 -1000
IC [mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
-1000
100
VCE = -5V
IC [mA], COLLECTOR CURRENT
IE = 0 f = 1MHz
-100
Cob [pF], CAPACITANCE
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
10
-10
1
-1 -0.0
0.1 -1 -10 -100
VBE[V], BASE-EMITTER VOLTAGE
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Output Capacitance
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
VCE = -10V
100
10
1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
(c)2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
2N5401
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B, May 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I11
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