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SPECIFICATION
Device Name Type Name Spec. No. :
: :
IGBT MODULE
2MBI1200UG-170 MS5F 5932
Sep. 30 '04 T.Nishimura Sep. 30 '04 T.Miyasaka
Y.Seki
MS5F5932
1
13
H04-004-07b
Revised
Date Classification Ind. Content
Records
Applied date Issued date Drawn Checked Checked Approved
Sep.-30-'04 Enactment
T.Miyasaka
Y.Seki
MS5F5932
2 13
H04-004-06b
2MBI1200UG-170 / PKG.No. M248
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
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3.Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Pc Tj Tstg Viso Mounting Screw Torque *2 Main Terminals Sense Terminals AC : 1min. Continuous 1ms Tc=25C Tc=80C Tc=25C Tc=80C Conditions Maximum Ratings 1700 20 1530 1200 3060 2400 1200 2400 4960 150 -40 ~ +125 3400 5.75 10 2.1 W C VAC Nm Units V V
A
1ms 1 device
(*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6) Main Terminals 8~10 Nm (M8) Sense Terminals 1.8~2.1 Nm (M4) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Items
Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on
Symbols
ICES IGES VGE(th) VCE(sat)
(main terminal)
Conditions
VGE = 0V VCE = 1700V VCE = 0V VGE=20V VCE = 20V Ic = 1200mA VGE=15V Tj= 25C
Characteristics min. typ. max.
5.5 6.5 2.35 2.70 2.05 2.40 120 1.30 0.75 1.50 0.40 2.10 2.30 1.80 2.00 0.45 0.25 1.0 1600 7.5 2.65 2.35 2.45 2.15 -
Units
mA nA V
Tj=125C Tj= 25C VCE(sat) Ic = 1200A (sense terminal) Tj=125C VCE=10V,VGE=0V,f=1MHz Cies Vcc = 900V ton tr toff tf VF
(main terminal)
V
nF
Ic = 1200A VGE=15V,Tj=125C Rgon = 0.1 Rgoff = 0.4 VGE=0V IF = 1200A IF = 1200A Tj= 25C Tj=125C Tj= 25C Tj=125C
s
Turn-off
Forward on voltage
VF
(sense terminal)
-
V
Reverse recovery Lead resistance, terminal-chip *
(*)
trr R lead
s m
Biggest internal terminal resistance among arm.
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5. Thermal resistance characteristics Items
Thermal resistance(1device) Contact Thermal resistance(1device)
Symbols
Rth(j-c) Rth(c-f) IGBT FWD
Conditions
min.
-
Characteristics typ. max.
0.006 0.0252 0.042 -
Units
C/W
with Thermal Compound (*)
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module Logo of production Lot.No. Sample.No.
2MBI1200UG-170
1200A / 1700V
Place of manufacturing (code) 7.Applicable category
This specification is applied to IGBT Module named 2MBI1200UG-170 .
8.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time

90%
0V VGE
L
0V trr Irr
90%

VCE
Vcc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
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11. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test methods and conditions : 40N : 101 sec. : 1.8 ~ 2.1 Nm (M4) 4.25 ~ 5.75 Nm (M6) 8 ~ 10 Nm (M8) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000m/s2 Pulse width : 6.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
(Aug.-2001 edition)
Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
Mechanical Tests
Test Method 401 Method Test Method 402 method
3 Vibration
Test Method 403 Reference 1 Condition code B
5
(0:1)
4 Shock
Test Method 404 Condition code A
5
(0:1)
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
Test Method 307 method Condition code A
5
(0:1)
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Tests Endurance
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note
Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others
USLx1.2 Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
Mechanical Tests
1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage
5 5 5 5 5 5 5 5 5 5
0 0 0 0 0 0 0 0 0 0
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias Test Method 101
5 5 5 5
0 0 0 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
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Collector current vs. Collector-Emitter voltage (typ.) VGE=+15V,sense terminal
2800 Tj=25C 2400 Collector current : Ic [A] 2000 1600 1200 800 400 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Tj=125C
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C, sense terminal
2800 2400 Collector current : Ic [A] 2000 1600 1200 800 400 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10V VGE=20V 15V 12V
9V
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=125C,sense terminal
10 Collector - Emitter voltage : VCE [ V ]
8
6
4 Ic=2400A Ic=1200A Ic=600A
2
0 5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
Collector-Emitter voltage : VCE [ 250V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 1000.0 Capacitance : Cies, Coes, Cres [ nF ]
Dynamic Gate charge (typ.) Tj= 25C
VCE VGE
100.0
Cies
10.0
Cres Coes
1.0
0.1 0 10 20 30 Collector-Emitter voltage : VCE [V]
0 0 1000 2000 3000 4000 5000
Gate charge : Qg [ nC ]
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Switching time vs. Collector current (typ.)
Vcc=900V, VGE=15V, Rgon=0.1, Rgoff=0.4, Tj= 25C 10 Switching time : ton, tr, toff, tf [ us ] Switching time : ton, tr, toff, tf [ us ] 100.0
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=15V, Tj= 125C
1
toff ton tf tr
ton 10.0 tr toff
0.1
1.0
tf 0.1
0.01 0 400 800 1200 1600 2000 Collector current : Ic [ A ]
0.1
1.0
10.0
100.0
Gate resistance : Rg [ ]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=15V, Rgon=0.1, Rgoff=0.4,Tj=125C 800 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 700 600 500 400 300 200 100 0 0 400 800 1200 1600 2000 Collector current : Ic [ A ] , Forward current : IF [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon Eoff 2800 2400 2000 1600 1200 800 400
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=15V, Tj= 125C
Eon
Err
Eoff
Err 0 0.1 1.0 10.0 100.0 Gate resistance : Rg [ ]
Reverse bias safe operating area (max.)
VGE=15V, Tj = 125C/ chip 2800 2400 Collector current : Ic [ A ] 2000 1600 1200 800 400 0 0 500 1000 1500 2000 Collector - Emitter voltage : VCE [ V ]
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Forward current vs. Forward on voltage (typ.) sense terminal
2800 Tj=25C Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ us ] 2400 Forward current : IF [ A ] 2000 1600 1200 800 400 0 0 1 2 3 4 Forward on voltage : VF [ V ] 1000 100 10 1 0 0 0 10000
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=15V, Rg=0.1, Tj=125C
Irr
trr
400
800
1200
1600
2000
Forward current : IF [ A ]
Transient thermal resistance (max.)
0.100 Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT
0.010
0.001 0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity.
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Warnings
- Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
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