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| Datasheet File OCR Text: |
| VRSM VRRM VDRM (dv/dt)cr ITRMS (maximum values for continuous operation) 2300 A 2800 A 1780 A (55 C) SKT 1200/04 D - SKT 1200/12 E SKT 1200/14 E SKT 1200/16 E SKT 1200/18 E - - - ITAV (sin. 180; Tcase = . . .; DSC) Thyristors SKT 1000 SKT 1200 V 500 900 1300 1500 1700 1900 2300 2700 2900 V 400 800 1200 1400 1600 1800 2200 2600 2800 V/s 500 500 1000 1000 1000 1000 1000 1000 1000 1465 A (58 C) SKT 1000/04 D SKT 1000/08 D SKT 1000/12 E SKT 1000/14 E SKT 1000/16 E SKT 1000/18 E SKT 1000/22 E L2 SKT 1000/26 E L2 SKT 1000/28 E L2 Symbol Conditions ITAV ITSM i 2t tgd tgr (di/dt)cr IH IL tq VT VT(TO) rT IDD; IRD VGT IGT VGD IGD Rthjc sin. 180; Tcase = 85 C; DSC Tvj = 25 C; 10 ms Tvj = 125 C; 10 ms Tvj = 25 C; 8,3 ... 10 ms Tvj = 125 C; 8,3 ... 10 ms Tvj = 25 C VD = 0,67 . VDRM f = 50 ... 60 Hz Tvj = 25 C; typ./max. Tvj = 25 C; RG = 33 ; typ./max. Tvj = 125 C; typ. Tvj = 25 C; IT = 3600 A; max. Tvj = 125 C Tvj = 125 C Tvj = 125 C; VRD = VRRM VDD = VDRM Tvj = 25 C Tvj = 25 C Tvj = 125 C Tvj = 125 C cont.; sin. 180; DSC/SSC rec. 120; DSC/SSC DSC/SSC IG = 1 A diG/dt = 1 A/s SKT 1000 1000 19 000 16 500 1 800 1 360 SKT 1200 1200 30 000 25 500 4 500 3 250 Units A A A kA2s kA2s s s A/s mA A s typ. 1 typ. 2 125 250 / 500 0,5 / 2 100 ... 250 2,0 1,14 0,243 100 5 250 0,25 10 0,021 0,0225 / 0,054 0,027 / 0,060 0,005 / 0,010 - 40 ... + 125 - 40 ... + 130 22 ... 25 5000 ... 5600 550 B 14 1,65 0,95 0,18 Features * Hermetic metal cases with ceramic insulators * Capsule packages for double sided cooling * International standard cases * Off-state and reverse voltages up to 2800 V * Amplifying gate Typical Applications * DC motor control (e. g. for machine tools) * Controlled rectifiers (e. g. for battery charging) * AC controllers (e. g. for temperature control) V V m mA V mA V mA C/W C/W C/W C/W C C kN lbs. g Rthch Tvj Tstg F w Case SI units US units (c) by SEMIKRON 0898 B 3 - 49 B 3 - 50 (c) by SEMIKRON (c) by SEMIKRON B 3 - 51 Fig. 6 b On-state characteristics Fig. 7 a Power dissipation vs. on-state current Fig. 7 b Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time Fig. 9 Gate trigger characteristics B 3 - 52 (c) by SEMIKRON (c) by SEMIKRON B 3 - 53 |
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