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| Datasheet File OCR Text: |
| NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D Collector-Emitter Sustaining Voltage: VCEO(sus) = 300V @ IC = 5mA D DC Current Gain: hFE = 40 - 200 @ IC = 100mA D Current-Gain - Bandwidth Product: fT = 10MHz (Min) @ IC = 100mA D IS/b Rated to 2A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.133W/C Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5C/W Electrical Charactersitics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector-Emitter Cutoff Current Collector-Base Cutoff Current Collector Cutoff Current VCEO(sus) IC = 5mA, IB = 0, Note 1 ICEO ICBO ICEV VCE = 200V, IB = 0 VCB = 325V, IE = 0 VCE = 300V, VEB(off) = 1.5V VCE = 200V, VEB(off) = 1.5V, TC = +100C Emitter-Base Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE IC = 50mA, VCE = 10V IC = 100mA, VCE = 10V IC = 250mA, VCE = 10V Collector-Emitter Saturation Voltage Base-Emitter "ON" Voltage Small-Signal Characteristics Current-Gain - Bandwidth Product Output Capacitance Small-Signal Current Gain fT Cob hfe IC = 100mA, VCE = 10V, f = 10MHz, Note 2 VCB = 100V, IE = 0, f = 100kHz IC = 100mA, VCE = 20V, f = 1kHz 10 - 35 - - - - 20 - MHz pF VCE(sat) VBE(on) IC = 250mA, IB = 25mA IC = 100mA, VCE = 10V 30 40 25 - - - - - - - - 200 - 2.5 1.0 V V IEBO VEB = 6V 300 - - - - - - - - - - - - 0.25 0.1 0.5 1.0 0.1 V mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. fT = |hfe| D frequency .485 (12.3) Dia .062 (1.57) .295 (7.5) .031 (0.78) Dia .960 (24.3) .580 (14.7) .360 (9.14) Min Base .147 (3.75) Dia (2 Places) .145 (3.7) R Max .200 (5.08) Collector/Case Emitter |
Price & Availability of NTE124
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