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  Datasheet File OCR Text:
 Band Switching Diodes
MA2X073
Silicon epitaxial planar type
Unit : mm
For band switching I Features
* Low forward dynamic resistance rf * Less voltage dependence of diode capacitance CD * Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
1.6 - 0.1
+ 0.2
INDICATES CATHODE
1
2
2.7 - 0.1 3.3 0.2 *(3. 8 0.2)
+ 0.2
5
0 to 0.05
Reverse voltage (DC) Forward current (DC) Operating ambient temperature*
VR IF Topr Tstg
35 100 -25 to +85 -55 to +150
V mA C C
5
*(
): WL type
Storage temperature
1 : Anode 2 : Cathode Mini Type Package (2-pin)
Note) * : Maximum ambient temperature during operation
Marking Symbol: 4B
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1 1.2 0.85 Unit nA V pF
Note) 1 Rated input/output frequency: 100 MHz 2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 - 0.03
+ 0.1
Parameter
Symbol
Rating
Unit
1.1 - 0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25C
0.3
0.55 0.1
1
MA2X073
IF V F
103 Ta = 25C
10
Band Switching Diodes
CD VR
f = 1 MHz Ta = 25C
IR T a
102 VR = 33 V
5 3 2
Reverse current IR (nA)
102
Diode capacitance CD (pF)
Forward current IF (mA)
10
10
1
1
0.5 0.3 0.2
1
10-1
10-1
0.1
10-2
0 4 8 12 16 20 24 28 32 36 40
0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80 100 120 140 160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
rf IF
1.0 f = 100 MHz Ta = 25C
1.0
rf f
IF = 2 mA Ta = 25C
Forward dynamic resistance rf ()
0.8
Forward dynamic resistance rf ()
1 3 10 30 100
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0 10
30
100
300
1 000
Forward current IF (mA)
Frequency f (MHz)
2


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