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| Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 50P085 VDSS ID25 RDS(on) = -85 V = -50 A = 55 m Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJ TC = 25C TC = 25C TC = 25C Maximum Ratings -85 -85 20 30 -50 -200 -50 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ W C C C C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 Features * International standard package JEDEC TO-247 AD * Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g * * * Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -85 -3.0 -5.0 100 TJ = 25C TJ = 125C -25 -1 55 V V nA A mA m VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = -250 A V DS = VGS, ID = -250 A V GS = 20 VDC, VDS = 0 V DS = 0.8 * VDSS V GS = 0 V VGS = -10 V, ID = 0.5 * ID25 * * * * Applications High side switching Push-pull amplifiers DC choppers Automatic test equipment Advantages Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * * High power density (c) 2004 IXYS All rights reserved DS99140A(10/04) IXTH 50P085 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 16 4200 VGS = 0 V, VDS = -25 V, f = 1 MHz 1720 750 46 VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 39 86 38 150 VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 36 70 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = -10 V; ID = ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -25 -200 -3 180 A A V ns Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, di/dt = 100 A/s, VR = -50 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTH 50P085 Fig. 1. Output Characte ris tics @ 25 Deg. C -50 -45 -40 VGS = -10V -9V -8V -140 -120 -100 -80 -60 -40 -20 -5V 0 0 -0.5 -1 -1.5 -2 -2.5 0 -2 -4 -6 -8 -7V -6V -5V -10 -12 -14 -16 -18 -20 -9V Fig. 2. Exte nded Output Characteristics @ 25 de g. C VGS = -10V I D - Amperes -30 -25 -20 -15 -10 -5 0 -6V -7V I D - Amperes -35 -8V V D S - Volts Fig. 3. Output Characte ris tics @ 125 Deg. C -50 -45 -40 VGS = -10V -9V 2 1.8 VGS = -10V V D S - Volts Fig. 4. RDS(on) Norm alize d to ID25 Value vs. Junction Te m pe rature R D S (on) - Normalized -8V I D - Amperes -35 -30 -25 -20 -15 -10 -5 0 0 -1 -2 -3 -4 -5 -5V -6V -7V 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 I D = -50A I D = -25A V D S - Volts Fig. 5. RDS(on) Norm alize d to ID25 Value vs . ID 2.4 2.2 VGS = -10V -55 -50 -45 TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs. Cas e Te m pe rature R D S (on) - Normalized 2 -40 I D - Amperes -100 -125 1.8 1.6 1.4 1.2 1 0.8 0 -25 -50 TJ = 125C -35 -30 -25 -20 -15 TJ = 25C -10 -5 0 -75 -50 -25 0 25 50 75 100 125 150 I D - Amperes (c) 2004 IXYS All rights reserved TC - Degrees Centigrade IXTH 50P085 Fig. 7. Input Adm ittance -150 40 35 TJ = -40C 25C 125C TJ = -40C 25C 125C Fig. 8. Transconductance -125 -100 I D - Amperes g f s - Siemens -9 -1 0 -1 1 30 25 20 15 10 -75 -50 -25 0 -4 -5 -6 -7 -8 5 0 0 -25 -50 -75 -100 -125 -150 V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage -150 -10 -9 -125 -100 -8 -7 VDS = -50V I D = -25A I G = -1mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25C -3 -3.5 -4 -6 -5 -4 -3 -2 -1 -75 TJ = 125C -50 -25 0 -0.5 -1 -1.5 -2 -2.5 0 0 20 40 60 80 100 120 140 V S D - Volts Fig. 11. Capacitance 6000 f = 1MHz 5000 1.00 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance Capacitance - pF 4000 C iss R (th) J C - (C/W) 3000 C oss 0.10 2000 1000 C rss 0 0 -5 -10 -15 0.01 -25 -30 -35 -40 1 10 100 1000 -20 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. Pulse Width - milliseconds |
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