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 IXTH 12N120
Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet
VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg Md Weight
Test Conditions TJ TJ = 25C to 150C = 25C to 150C; RGS = 1 M
Maximum Ratings 1200 1200 30 40 12 48 12 30 1.0 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J W C C C g C
TO-247 AD
Continuous Transient TC TC TC TC TC = 25C = 25C, pulse width limited by TJM = 25C = 25C = 25C
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times
Mounting torque
1.13/10 Nm/lb.in. 6 300
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 3 5 100 TJ = 25C TJ = 125C 25 3 1.4 V V nA A mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS98937E(04/04)
IXTH 12N120
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 3400 VGS = 0 V, VDS = 25 V, f = 1 MHz 280 105 24 VGS = 10 V, VDS = 0.5 * VDSS, 0.5 ID25 RG = 1.5 (External) 25 35 17 95 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 22 50 0.25 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.5 850 A A V ns
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXTH 12N120
Fig. 1. Output Characteristics @ 25C
12 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 6V 6.5V VGS = 10V 8V 7.5V 7V 20 18 16 14 6.5V VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
12 10 8 6 4 2 0 0 3 6 9 12 6V 6.5V 7V
V D S - Volts Fig. 3. Output Characteristics @ 125C
12 11 10 9 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 24 5.5V 5V 28 32 36 40 6V VGS = 10V 8V 7V 6.5V 3.1 2.8 VGS = 10V
V D S - Volts
15
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs . Junction Tem perature
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100 125 150 I D = 6A I D = 12A
I D - Amperes
V D S - Volts
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature
14 12
Fig. 5. RDS(on) Norm alize d to 0.5 ID25 Value vs. ID
2.8 2.6 VGS = 10V
R D S ( o n ) - Normalized
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 2 0 TJ = 25C
I D - Amperes
14 16 18 20
TJ = 125C
10 8 6 4
I D - Amperes
8
10
12
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXTH 12N120
Fig. 7. Input Adm ittance
16 14 12 10 8 6 TJ = 125C 4 2 0 4.5 5 5.5 6 6.5 7 7.5 25C -40C 20 18 16 TJ = -40C 25C 125C
Fig. 8. Trans conductance
g f s - Siemens
I D - Amperes
14 12 10 8 6 4 2 0 0
2
4
6
8
10
12
14
16
18
V G S - Volts Fig. 9. Source Current vs. Source -To-Drain Voltage
36 33 30 27 24 10 9 8 7 VDS = 600V I D = 6A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 25C
21 18 15 12 9 6 3 0 0.4 0.5 0.6 0.7 0.8 0.9 1 TJ = 125C
6 5 4 3 2 1 0
V S D - Volts
0
10
20
30
40
50
60
70
80
90
100
Q G - nanoCoulombs Fig. 12. Maxim um Trans ient Therm al Resistance
1.00
Fig. 11. Capacitance
10000 f = 1MHz
Capacitance - picoFarads
C iss 1000 C oss
R( t h ) J C - C / W
40
0.10
100 C rss
10 0 5 10 15
0.01
V D S - Volts
20
25
30
35
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.


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