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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 1 2 3 D G S Features H03N60 Series Symbol: * Robust High Voltage Termination * Avalanc he Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H03N60E (TO-220AB) PD H03N60F (TO-220FP) Derate above 25C H03N60E (TO-220AB) H03N60F (TO-220FP) Tj, Tstg EAS TL Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25) Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds 0.4 0.33 -55 to 150 35 260 C mJ C W/C 55 28 W o Value 3 12 30 Units A A V H03N60E, H03N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62.5 Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 2/5 Units 2 3.3 C/W C/W ELectrical Characteristics (Tj=25C, unless otherwise specified) Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125C) Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=1.5A)* Forward Transconductance (VDS50V, ID=1.5A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the drain lead 0.25" from package to source bond pad) (VDS=300V, ID=3A, VGS=10V)* (VDD=300V, ID=3A, RG=18, VGS=10V)* VGS=0V, VDS=25V, f=1MHz Min. 600 2 1 Typ. 465 66 13 12 21 30 24 18 5 12 4.5 7.5 Max. 1 50 100 -100 4 4 30 nH nH nC ns pF Unit V uA uA nA nA V mhos *: Pulse Test: Pulse Width 300us, Duty Cycle2% Source-Drain Diode Symbol VSD ton trr Forward On Voltage(1) Forward Turn-On Time Reverse Recovery Time Characteristic IS=3A, VGS=0V, TJ=25 C IS=3A, VGS=0V, dIS/dt=100A/us o Min. - Typ. ** 340 Max. 1.6 - Units V ns ns **: Negligible, Dominated by circuit inductance H03N60E, H03N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic 10 9 VGS=10V VGS=8V 800 1000 Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 3/5 Capacitance Characteristics ID, Drain-Source Current (A) 8 7 6 5 Capacitance (pF) VGS=6V VGS=5V 600 4 3 2 1 0 0 2 4 6 8 10 VGS=4V 400 Ciss 200 Crss 0 0.1 1 10 100 Coss VDS, Drain-Source Voltage (V) VDS, Deain-Source Voltage (V) Typical On-Resistance & Drain Current 6.0 6 Drain Current Variation with Gate Voltage and Temperature VDS=10 V TC= 25 C o RDS(ON), Drain-Source On-Resistance ... 5.5 VGS=10V 4.5 4.0 3.5 3.0 2.5 2.0 0 1 2 3 4 5 6 ID, Drain-Source Current (A) 5.0 5 4 3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ID, Drain Current (A) VGS, Gate-Source Voltage (V) Gate Charge Waveforms 12 10 Maximum Safe Operating Area 10 VDS=200V 8 ID, Drain Current (A) 1ms 10ms 1 VGS (V) 6 4 100ms 2 0 0 1 2 3 4 5 0.1 10 100 1000 Q, Gate Charge (nC) VDS, Drain-Source Voltage (V) H03N60E, H03N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 4/5 E 0 3N6 0 Date Code Control Code H I G Tab P L J M 3 2 1 O N K Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A 1 D 4 EO C Pb Free Mark Pb-Free: " . " (Note) Normal: None H F 0 3N6 0 Date Code Control Code 2 3 5 I N 3 G J Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 F 2 K 1 M L DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 1/2/4/5 3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H03N60E, H03N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3oC/sec 100oC 150 C 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245oC 5oC 260 C 5 C o o Dipping time 10sec 1sec 10sec 1sec H03N60E, H03N60F HSMC Product Specification |
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