 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR Preliminary Specification, Rev 02/03/2004 FEATURES NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 65 3.0 32.5 1340 200 -65 to +200 350 Watts, 960 - 1215 MHz, 10s Pulse Width, 10% Duty Cycle OUTLINE DRAWING Units V V A W C C ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability BVCES ICES RTH POUT 65 350 45 9 - Max 15 0.13 10:1 1.5:1 Units V mA C/W W % dB IC=50mA VCE=50V Test Conditions VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz All spurious signals shall be < -60dBc below carrier, except F = Fo 1/2 Fo shall be < -40dBc C RL VSWR-T VSWR-S BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF () Z OF () 960 1030 1090 1150 1215 1.8 - j1.7 1.7 - j1.4 1.6 - j1.2 1.4 - j1.0 1.2 - j0.8 1.7 - j1.7 1.8 - j1.2 1.9 - j0.8 1.9 - j0.6 2.0 - j0.2 M/A-COM RF POWER INNOVATIONS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. 1 MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR Preliminary Specification, Rev 02/03/2004 350 Watts, 960 - 1215 MHz, 10s Pulse Width, 10% Duty Cycle TYPICAL RF PERFORMANCE - OUTPUT POWER VS. INPUT POWER 550 450 Pout (watts) 350 250 150 20 25 30 35 Pin (watts) 960 MHz 1090 MHz 1215 MHz 40 45 50 TYPICAL RF PERFORMANCE - COLLECTOR EFFICIENCY VS. INPUT POWER 65 Collector Efficiency (%) 55 45 35 25 20 25 30 35 Pin (watts) 960 MHz 1090 MHz 1215 MHz 40 45 50 M/A-COM RF POWER INNOVATIONS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. 2 |
Price & Availability of MAPRST0912-350
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |