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| DC - 6 GHz Unterminated SPDT Switch Technical Data HMMC-2006 Features * Frequency Range: DC-6 GHz * Insertion Loss: <1dB @ 6 GHz * Isolation: >70 dB @ 45 MHz >35 dB @ 6 GHz * Return Loss: >12 dB (Both Input & Output) * Switching Speed: <1 ns * P-1dB: 23 dBm @ 50 MHz >27dBm @ 6 GHz * Harmonics: <-25 dBc @ 20 dBm (DC coupled) RF IN Chip ID SEL1 SEL2 RF OUT2 RF OUT1 Description The HMMC-2006 is a GaAs monolithic microwave integrated circuit (MMIC) designed for low insertion loss and high isolation from DC to 6 GHz. It is intended for use as a general-purpose, singlepole, double-throw (SPDT) switch. One series and two shunt MESFETs per throw provide 1.2 dB maximum insertion loss and 35 dB minimum isolation at 6 GHz. HMMC-2006 chips use through-substrate vias to provide ground connections to the chip backside and minimize the number of wire bonds required. The HMMC-2006 is also available in an 8-lead flatpack (1GG7-4201). Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 960 x 1070 m (37.8 x 42.1 mils) +0, -10 m (+0, -0.4 mils) 127 15 m (5.0 0.6 mils) 80 x 80 m (3.2 x 3.2 mils), or larger Absolute Maximum Ratings[1] Symbol Vsel Pin Top TSTG Tmax Parameters/Conditions Select Voltages 1 and 2 RF Input Power Operating Temperature Storage Temperature Maximum Assembly Temp. (for 60 seconds max.) Units V dBm C C C -55 -65 Min. -12 Max. + 3 30 +125 +165 +300 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25C except for Tch, TSTG, and Tmax. 5965-9071E 7-20 DC Specifications/Physical Properties, TA = 25C Symbol Il Vp BVgss Parameters and Test Conditions Leakage Current @ -10 V Pinch-off Voltage @ 8 mA Breakdown Voltage Total Units A V V -6.75 -18.0 Min. Typ. Max. 100 -3.25 -12.5 RF Specifications, TA = 25C, ZO = 50 , Vsel high = 0 V, Vsel low = -10 V Symbol BW IL ISO RL in RL out P1 dB ts Parameters and Test Conditions Guaranteed Operating Bandwidth Insertion Loss, RFin to RFout, Isolation, RFin to RFout, Input Return Loss Output Return Loss Input Power where IL increases by 1 dB Switching Speed, 10% - 90% RF Envelope, f = 50 MHz f = 2 GHz f = 6 GHz, ON throw f = 6 GHz, OFF throw Units GHz dB dB dB dB dBm ns 35 12 12 18 Min. DC 1 40 14 15 23 1 Typ. Max. 6 1.2 7-21 Applications The HMMC-2006 can be used in instrumentation, communications, radar, ECM, EW, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, high-speed switching, replacement of mechanical switches, and so on. It can also be used as a terminated SPST (single-pole-single-throw) switch by placing a 50 load on either RF output port. Assembly Techniques Die attach may be done with either a AuSn solder preform or conductive epoxy. Gold thermosonic bonding is recommended for all bonds. The top and bottom metallization is gold. For more detailed information see HP application note #999 "GaAs MMIC Assembly and Handling Guidelines." GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. S-Parameters[1], TA = 25C, ZO = 50 , Vsel high = 0 V, Vsel low = -10 V Frequency GHz 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 S11 Mag. 0.93 0.0365 0.0372 0.0448 0.0542 0.0631 0.0715 0.0795 0.0872 0.0951 0.1022 0.1074 0.1138 Ang. -8 -27.03 -41.81 -63.14 -80.60 -88.46 -93.98 -101.90 -108.90 -114.40 -120.90 -123.50 -132.70 S21 (Insertion Mag. 4.26 0.9366 0.9336 0.9311 0.9286 0.9271 0.9242 0.9199 0.9164 0.9123 0.9054 0.9032 0.9058 Loss) Ang. 172 -11.32 -17.35 -23.47 -27.67 -29.73 -33.03 -38.93 -45.14 -50.49 -56.36 -62.07 -69.04 S31 (Isolation) Mag. Ang. 0.01 86 0.0010 78.03 0.0017 76.84 0.0026 76.05 0.0033 75.66 0.0039 77.4 0.0049 81.14 0.0059 82.09 0.0063 78.90 0.0068 78.94 0.0078 84.68 0.0084 84.71 0.0115 91.24 Note: 1. 3-port-wafer-probed data. 7-22 RF IN RF OUT RF OUT SEL2 SEL2 Figure 1. HMMC-2006 Schematic. Recommended Operating Conditions, TA = 25C Select Line SEL1 -10 V 0V SEL2 0V -10 V RF Path RF IN to RF OUT1 Isolated Low Loss RF IN to RF OUT2 Low Loss Isolated 7-23 HMMC-2006 Typical Performance -40 S21-ON -14 -40 S21-OFF INSERTION LOSS (dB) -60 -22 S22 ISOLATION (dB) -50 RETURN LOSS (dB) -18 S11 -50 -60 S21-ON -70 -70 -26 -80 0 2 4 6 FREQUENCY (GHz) -30 0 2 4 6 FREQUENCY (GHz) -80 0 2 4 6 FREQUENCY (GHz) Figure 2. Insertion Loss[1] vs. Frequency. Figure 3. Input and Output (On Throw) Return Loss[1] vs. Frequency. Figure 4. Input-to-Output Isolation[1] vs. Frequency. -40 S23 ISOLATION (dB) -50 -60 -70 -80 0 2 4 6 FREQUENCY (GHz) Figure 5. Output-to-Output Isolation[2] vs. Frequency. Notes: 1. Wafer-probed measurements 2. Calculated from wafer-probed measurements 7-24 1070 460 960 SEL1 SEL2 610 995 880 RF OUT2 RF OUT1 730 Chip ID RF IN 75 0 0 535 Figure 6. HMMC-2006 Bonding Pad Locations. (Dimensions in micrometers) This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative. 7-25 |
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