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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005 TRANSISTORNPN (c) TO 220 FEATURES Power dissipation PCM : 1.5 W Tamb=25ae(c) Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE (sat) f t t 1.BASE 2.COLLECTOR 3.EMITTER 123 unless Test otherwise specified(c) TYP MAX UNIT V V V 1000 100 1000 A A A conditions MIN 700 400 9 Ic= 1000 A =0 IE Ic= 10 mA =0 IB IE= 1000 A =0 IC VCB= 700 V IE=0 VCE= 400 V IB=0 VEB= 9 V IC=0 VCE= 5 V, IC= 1000mA IC=2000m A,IB=500 mA IC=2000m A, IB= 500mA VCE=10 V, IC=500mA 10 40 0.6 1.6 V V MHz 0.9 4 s s T f = 1MHz IB1=-IB2=0.4A, IC=2A 5 f s VCC=120V CLASSIFICATION OF h FE Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 TO-220-3L PACKAGE OUTLINE DIMENSIONS D |O A C1 E1 F L1 b1 E A1 b L e e1 C Symbol A A1 b b1 c c1 D E E1 e e1 F L L1 |O Dimensions In Millimeters Min 4.470 2.520 0.710 1.170 0.310 1.710 10.010 8.500 12.060 2.540TYP 4.980 2.590 13.400 3.560 3.790 5.180 2.890 13.800 3.960 3.890 Max 4.670 2.820 0.910 1.370 0.530 1.370 10.310 8.900 12.460 Min Dimensions In Inches Max 0.184 0.111 0.036 0.054 0.021 0.054 0.406 0.350 0.491 0.100TYP 0.196 0.102 0.528 0.140 0.149 0.204 0.114 0.543 0.156 0.153 1.176 0.099 0.028 0.046 0.012 0.046 0.394 0.335 0.475 |
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