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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3058 2SK3058-S 2SK3058-ZJ 5 Note 2SK3058-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
FEATURES
* Super Low On-State Resistance RDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 m MAX. (VGS = 4.0 V, ID = 28 A) * Low Ciss : Ciss = 2100 pF (TYP.) * Built-in Gate Protection Diode
TO-220SND package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse)
Note1
(TO-220AB) 60 20 +20, -10 55 165 58 1.5 150 -55 to + 150 27.5 75.6 V V V A A W W C C A mJ (TO-262)
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25 C, VDD = 30 V, RG = 25 , VGS = 20 V 0 (TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13097EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998, 1999
2SK3058
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 28 A VGS = 4.0 V, ID = 28 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 28 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V F = 1 MHz ID = 28 A VGS = 10 V VDD = 30 V RG = 10 ID = 55 A VDD = 48 V VGS = 10 V IF = 55 A, VGS = 0 V IF = 55 A, VGS = 0 V di/dt = 100A/s 2100 550 220 36 410 130 260 45 7 13 1.0 60 100 1.0 13 MIN. TYP. 12 19 1.6 42 10 10 MAX. 17 27 2.0 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
5
Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
5
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
90 % 0 10 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D13097EJ2V0DS
2SK3058
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70
PT - Total Power Dissipation - W
100 80 60 40 20
60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
5
1000
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
PW
10 0 s
ID - Drain Current - A
100
d ite ) Lim 10 V n) (o = S ID(DC) S RD t V G (a
=1 0 s
10
1 10 0 ms 0m Po DC s Lim wer ite Dis d sip ati on
1m s
1 TC = 25C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
0.1 0.1
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A)= 83.3 C/W
10 Rth(ch-C)= 2.16 C/W 1
0.1
0.01 0.001 10 TC = 25C Single Pulse 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D13097EJ2V0DS
3
2SK3058
FORWARD TRANSFER CHARACTERISTICS 100
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 100 VGS = 10 V
ID - Drain Current - A
10
1
TA = 125C 75C 25C -25C
ID - Drain Current - A
80 60 40 20
VGS = 4.0 V
0.1 Pulsed VDS = 10 V 4 5
0
1
2
3
0
1
2
3
4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
100 Tch = -25C 25C 75C 10 125C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 70 60 50 40 30 20 10 ID = 28 A 0 10 20 30 Pulsed
1
0.1 0.1
VDS = 10 V Pulsed 1.0 10 100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA
Pulsed
60
1.5
40
1.0
20
VGS = 4.0 V VGS = 10 V
0.5
0 0.1
0
1
10
100
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D13097EJ2V0DS
2SK3058
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 VGS = 4.0 V 30
5
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000
ISD - Diode Forward Current - A
Pulsed
100 VGS = 10 V 10 VGS = 0 V
20 VGS = 10 V 10 ID = 28 A -50 0 50 100 150
1
0
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS
VDD = 30 V VGS = 10 V RG = 10
VGS = 0 V f = 1 MHz
10 000
10 000
1 000
tr tf td(off) td(on)
Ciss 1 000 Coss 100 0.1 Crss 1 10 100
100
10 0.1 1 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
60 VDD = 12 V 30 V 48 V 40
12 10 8 6
100
10
20
4 2
1 0.1
1
10
100
0
20
40
60
80
0
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D13097EJ2V0DS
5
VGS - Gate to Source Voltage - V
di/dt = 100 A /s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16 ID = 55 A 14
2SK3058
5
100
IAS - Single Avalanche Current-A
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
160
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 30V RG = 25 VGS = 20 V 0 V IAS 27.5A
IAS = 27.5 A
EAS =7
140 120 100 80 60 40 20
10
5.6
mJ
1.0 VDD = 30 V VGS = 20 V 0 V RGS = 25 100 1m 10 m
0.1 10
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13097EJ2V0DS
2SK3058
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
10.6 MAX. 10.0
5.9 MIN. 15.5 MAX.
2)TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.00.5
3.00.3
4.8 MAX. 1.30.2
3.60.2
1.30.2
(10) 4
1
2
3
4 123
6.0 MAX.
1.30.2
12.7 MIN.
1.30.2
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.80.2
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
3)TO-263 (MP-25ZJ)
5
3)TO-220SMD (MP-25Z)
Note
(10) 4
1.00.5 8.50.2
4.8 MAX. 1.30.2
(10) 4
1.00.5 8.50.2
4.8 MAX. 1.30.2
5.70.4
1.10.4
3.00.5
1.40.2 0.70.2 2.54 TYP. 1 2
(0
.5R
)
3 2.54 TYP.
(
R 0.8
)
1.40.2
0.50.2
1.00.3 2.54 TYP. 1 2
(0
) .5R R) 0.8 (
0.50.2
3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
EQUIVALENT CIRCUIT
Drain
Note This package is produced only in Jaman.
Remark
Gate Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate Protection Diode
Source
Data Sheet D13097EJ2V0DS
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
7
2SK3058
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4
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