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(1) PW (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data High-Voltage NPN Silicon Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS REV 7 Current-Gain -- Bandwidth Product (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.05 Adc) (IC = 1.0 Adc, IB = 0.1 Adc) Collector-Emitter Saturation Voltage (1) (IC = 0.5 Adc, IB = 0.05 Adc) (IC = 1.0 Adc, IB - 0.10 Adc) DC Current Gain(1) (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.5 Adc, VCE = 5.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 400 Vdc, VEB(off) = 1.5 Vdc) (VCE = 400 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Collector-Emitter Sustaining Voltage* (1) (IC = 100 mAdc, IB = 0) Thermal Resistance, Junction to Case Storage Temperature Range Operating Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage v 300 s Duty Cycle v 2.0%. Characteristic Rating Characteristic MJ413 MJ423 MJ413 MJ423 MJ423 MJ413 Symbol Symbol VCEX VCB VEB IC TJ Tstg JC IB PD MJ413 400 400 2.0 5.0 10 - 65 to + 200 - 65 to + 150 Max 125 1.0 1.0 MJ423 400 400 2.0 5.0 10 V(BR)CEO(sus) VCE(sat) VBE(sat) Symbol IEBO ICEX hFE fT Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C Min 325 2.5 20 15 30 10 -- -- -- -- -- -- -- 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS MJ413 MJ423 Order this document by MJ413/D CASE 1-07 TO-204AA (TO-3) 1.25 1.25 0.25 0.5 Max 0.8 0.8 5.0 80 -- 90 -- -- -- mAdc mAdc MHz Unit Vdc Vdc Vdc -- 1 MJ413 MJ423 10 IC, COLLECTOR CURRENT (AMP) 100 s PD, POWER DISSIPATION (WATTS) 1.0 ms 1.0 TJ = 150C SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION AT TC = 25C (BASE-EMITTER DISSIPATION IS PERCEPTIBLE ABOVE IC 5 AMP) The Safe Operating Area Curves indicate I C - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power temperature derating must be observed for both steady state and pulse power conditions. 125 100 dc 75 50 0.1 25 0.01 1.0 0 2.0 4.0 6.0 10 20 40 60 100 200 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0 20 40 60 80 100 120 140 160 180 200 TC, CASE TEMPERATURE (C) Figure 1. Active-Region Safe-Operating Area Figure 2. Power-Temperature Derating Curve 500 IC, COLLECTOR CURRENT (mA) 400 50 mHy 300 X 200 200 VCEO(sus) IS ACCEPTABLE WHEN VCE 325 V AT IC = 100 mA Hg RELAY TO SCOPE + - 6.0 V Y 50 V + - 100 0 0 100 200 300 400 500 300 1.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Sustaining Voltage Test Load Line Figure 4. Sustaining Voltage Test Circuit IC, COLLECTOR CURRENT (AMPS) 100 70 50 hFE , DC CURRENT GAIN 30 20 TJ = 100 C 10 7.0 5.0 3.0 2.0 1.0 10 7.0 VCE = 5.0 V 25C 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 TJ = 100 C 25C VCE = 10 V 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0 0.5 1.0 1.5 2.0 2.5 IC, COLLECTOR CURRENT (AMP) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 5. Current Gain Figure 6. Transconductance 2 Motorola Bipolar Power Transistor Device Data MJ413 MJ423 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 3 MJ413 MJ423 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *MJ413/D* MJ413/D |
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