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BBY55...
Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread
1
Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature

BBY55-02V BBY55-02W BBY55-03W
2
Type BBY55-02V BBY55-02W BBY55-03W
Package SC79 SCD80 SOD323
Configuration single single single
LS(nH) 0.6 0.6 1.8
Marking 7 77 7 white
Maximum Ratings at TA = 25C, unless otherwise specified Symbol VR IF Top Tstg Value 16 20 -55 ... 150 -55 ... 150 Unit V mA C
1
Nov-14-2002
BBY55...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 15 V VR = 15 V, TA = 85 C
AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz VR = 5 V, f = 470 MHz Series resistance CT2 /CT10 rS CT 17.5 14 11.6 10 5.5 2 18.6 15 12.6 11 6 2.5 0.15 19.6 16 13.6 12 6.5 3 0.4 pF
Unit max. nA
typ.
IR 3 100
2
Nov-14-2002
BBY55...
Diode capacitance CT =
f = 1MHz
f = 1 MHz
4
%
30 pF
24 22 2
C
CT
20 18 16 14 12 10 8 6
1
0
-1
-2
-3
2 0 0 2 4 6 8 10
V
14
-4 -50
VR
TA = Parameter
10 -9
0.5
A Ohm 80C
10 0.3
-10
IR
rs
0.2 10 -11
0.1
0 0
2
4
6
8
10
V
14
10 -12 0
2
4
6
8
VR
3
Series resistance r S= (V R) f = 470 MHz
Reverse current IR =
4
C=(C(TA)-C(25C))/C(25C)
-30
-10
10
30
50
(VR)
10
(VR )
Capacitance change
C = (TA)
1V 2V 6V 10V
70
C
110
TA
60C
25C
12
14
V
18
VR
Nov-14-2002

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