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APT20GT60AR 600V 30A Thunderbolt IGBT The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed. TO-3 (TO-204AE) * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated * Hermetic Package MAXIMUM RATINGS Symbol V CES VCGR V EC VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G E C All Ratings: TC = 25C unless otherwise specified. APT20GT60AR UNIT Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Y R A IN IM L E R P 600 600 15 20 30 20 60 40 40 @ TC = 25C Volts Amps mJ Watts C 140 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 500A, Tj = 25C) MIN TYP MAX UNIT 600 -15 3 1.6 4 2.0 5 2.5 2.8 40 6-2000 050-5969 Rev - Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES 1000 100 A nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT20GT60AR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT 1100 110 65 95 40 8 10 34 115 125 15 15 ns nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Y R A IN IM L E R P Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W ns 190 30 0.55 0.45 1.0 15 18 TJ = +150C mJ Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W ns 160 25 Total Switching Losses Forward Transconductance TJ = +25C VCE = 20V, I C = I C2 0.60 4 mJ S THERMAL CHARACTERISTICS Symbol RQJC RQJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.90 80 1 2 6-2000 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 200H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 3 050-5969 Rev - |
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